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3LN01MのメーカーはSanyo Semicon Deviceです、この部品の機能は「Ultrahigh-Speed Switching Applications」です。 |
部品番号 | 3LN01M |
| |
部品説明 | Ultrahigh-Speed Switching Applications | ||
メーカ | Sanyo Semicon Device | ||
ロゴ | |||
このページの下部にプレビューと3LN01Mダウンロード(pdfファイル)リンクがあります。 Total 4 pages
Ordering number:ENN6138
N-Channel Silicon MOSFET
3LN01M
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Package Dimensions
unit:mm
2158
[3LN01M]
0.3
3
0.15
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW≤10µs, duty cycle≤1%
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : YA
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=80mA
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
12
0.65 0.65
2.0
0.3 0.6
0.9
1 : Gate
2 : Source
3 : Drain
SANYO : MCP
Ratings
30
±10
0.15
0.6
0.15
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
0.4 1.3 V
0.15 0.22
S
2.9 3.7 Ω
3.7 5.2 Ω
6.4 12.8 Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
31000TS (KOTO) TA-1985 No.6138-1/4
1 Page 3LN01M
RDS(on) -- ID
10
RDS(on) -- ID
100
VGS=2.5V
7
VGS=1.5V
75
5 Ta=75°C
25°C
--25°C
3
2
3
2
10 Ta=75°C
7
5 --25°C
3 25°C
2
1.0
0.01
7
23
5 7 0.1
23
Drain Current, ID – A
RDS(on) -- Ta
5 7 1.0
IT00033
6
5
4
3
I D=I4D0=m8A0m, VAG, VS=G2S.5=V4.0V
2
1
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C IT00035
IF -- VSD
1.0
7 VGS=0
5
3
2
0.1
7
5
3
2
1.0
0.001
1.0
7
5
3
2
0.1
7
5
3
2
23
5 7 0.01
23
Drain Current, ID – A
yfs -- ID
5 7 0.1
IT00034
VDS=10V
Ta=--25°C
75°C
25°C
0.01
0.01
1000
7
5
3
2
100
7
5
3
2
23
5 7 0.1
23
Drain Current, ID – A
SW Time -- ID
5 7 1.0
IT00036
VDD=15V
VGS=4V
td(off)
tf
tr
td(on)
0.01
0.5
100
7
5
3
2
0.6 0.7 0.8 0.9 1.0 1.1 1.2
Diode Forward Voltage, VSD – V IT00037
Ciss, Coss, Crss -- VDS
f=1MHz
10
Ciss
7
5 Coss
3
2 Crss
1.0
0
2 4 6 8 10 12 14 16 18 20
Drain-to-Source Voltage, VDS – V IT00039
10
0.01
2
10
VDS=10V
9 ID=150mA
8
3 57
Drain Current, ID – A
VGS -- Qg
0.1
2
IT00038
7
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Total Gate Charge, Qg – nC
IT00040
No.6138-3/4
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 3LN01M データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
3LN01C | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
3LN01C | N-Channel Small Signal MOSFET | ON Semiconductor |
3LN01M | Ultrahigh-Speed Switching Applications | Sanyo Semicon Device |
3LN01M | Small Signal MOSFET | ON Semiconductor |