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3EZ17のメーカーはTRSYSです、この部品の機能は「GLASS PASSIVATED JUNCTION SILICON ZENER DIODE」です。 |
部品番号 | 3EZ17 |
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部品説明 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE | ||
メーカ | TRSYS | ||
ロゴ | |||
このページの下部にプレビューと3EZ17ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES
l Low profile package
l Built-in strain relief
l Glass passivated junction
l Low inductance
l Excellent clamping capability
l Typical ID less than 1 A above 11V
l High temperature soldering :
260 /10 seconds at terminals
l Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
DO-15
MECHANICAL DATA
Case: JEDEC DO-15, Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.015 ounce, 0.04 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Peak Pulse Power Dissipation (Note A)
Derate above 75
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note B)
Operating Junction and Storage Temperature Range
SYMBOL
PD
IFSM
TJ,TSTG
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
VALUE
3
24
15
UNITS
Watts
mW/
Amps
-55 to +150
1 Page RATING AND CHARACTERISTICS CURVES
3EZ11 THRU 3EZ200
Fig. 2-TYPICAL THERMAL RESPONSE L
Fig. 3-MAXIMUM SURGE POWER
Fig. 4-TYPICAL REVERSE LEAKAGE
APPLICATION NOTE:
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to
determine junction temperature under any set of
operating conditions in order to calculate its value. The
following procedure is recommended:
Lead Temperature, TL, should be determined from:
TL = LAPD + TA
LA is the lead-to-ambient thermal resistance ( /W)
and PD is the power dissipation. The value for LA will
vary and depends on the device mounting method.
LA is generally 30-40 /W for the various chips and
tie points in common use and for printed circuit board
wiring.
The temperature of the lead can also be measured using
a thermocouple placed on the lead as close as possible
to the tie point. The thermal mass connected to the tie
point is normally large enough so that it will not
significantly respond to heat surges generated in the
diode as a result of pulsed operation once steady-state
conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
TJ = TL + TJL
TJL is the increase in junction temperature above the
lead temperature and may be found from Figure 2 for a
train of power pulses or from Figure 10 for dc power.
TJL = LAPD
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 3EZ17 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
3EZ1 | Silicon-Power-Z-Diodes (non-planar technology) | Diotec Semiconductor |
3EZ10 | Silicon-Power-Z-Diodes (non-planar technology) | Diotec Semiconductor |
3EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts) | Pan Jit International Inc. |
3EZ100 | GLASS PASSIVATED JUNCTION SILICON ZENER DIODE | TRSYS |