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2SK3355-ZJ の電気的特性と機能

2SK3355-ZJのメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK3355-ZJ
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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2SK3355-ZJ Datasheet, 2SK3355-ZJ PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
RDS(on)1 = 5.8 mMAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.8 mMAX. (VGS = 4.0 V, ID = 42 A)
Low Ciss: Ciss = 9800 pF TYP.
Built-in gate protection diode
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3355
TO-220AB
2SK3355-S
TO-262
2SK3355-ZJ
2SK3355-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
60
±20
±83
±332
Total Power Dissipation (TC = 25°C) PT 100
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS 75
EAS 562
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14132EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000

1 Page





2SK3355-ZJ pdf, ピン配列
2SK3355
5 TYPICAL CHARACTERISTICS (TA = 25 °C )
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - ˚C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
RD(Sa(otnV) GLSim=it1e0d V) ID(DC)
10
ID(pulse)
PW = 10 µs
100 µs
DC Dissipation10Lmim1smitsed
TC = 25˚C
Single Pulse
1
0.1
1
10 100
VDS - Drain to Source Voltage - V
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 83.3 ˚C/W
10
1 Rth(ch-C) = 1.25 ˚C/W
0.1
0.01
10µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1000
Data Sheet D14132EJ2V0DS00
3


3Pages


2SK3355-ZJ 電子部品, 半導体
1000
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100 IAS = 75 A
10
EAS = 562 mJ
VDD = 30 V
RG = 25
1 VGS = 20 V 0 V
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK3355
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25
VGS = 20 V 0 V
120 IAS 75 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D14132EJ2V0DS00

6 Page



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部品番号部品説明メーカ
2SK3355-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC
2SK3355-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC


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