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PDF 2SK3355 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3355 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID = 42 A)
• Low Ciss: Ciss = 9800 pF TYP.
• Built-in gate protection diode
5 ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3355
TO-220AB
2SK3355-S
TO-262
2SK3355-ZJ
2SK3355-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
60
±20
±83
±332
Total Power Dissipation (TC = 25°C) PT 100
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg –55 to +150
IAS 75
EAS 562
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14132EJ2V0DS00 (2nd edition)
Date Published May 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999, 2000
1 page  
2SK3355
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
12
Pulsed
10
VGS = 4.0 V
8 10 V
6
4
2
0 ID = 42 A
−50 0 50 100 150
Tch - Channel Temperature - ˚C
100000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
10000
Ciss
1 000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
VGS = 10 V
100
VGS = 0 V
10
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
10000
1000
100
SWITCHING CHARACTERISTICS
td(on)
td(off)
tf
tr
10
0.1
1 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 10
VGS
80 8
VDD = 48 V
60 30 V
12 V
6
40 4
VDS
20
2
0 ID = 83 A
0 20 40 60 80 100 120 140 160
QG - Gate Charge - nC
Data Sheet D14132EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK3355.PDF ] | |
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