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PDF 2SK3353-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SK3353-Z | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3353
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3353 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
5 RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
5 RDS(on)2 = 14 mΩ MAX. (VGS = 4 V, ID = 41 A)
5 • Low Ciss: Ciss = 4650 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3353
2SK3353-S
2SK3353-Z
TO-220AB
TO-262
TO-220SMD
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
5 Drain Current (pulse) Note1
5 Total Power Dissipation (TC = 25°C)
ID(DC)
ID(pulse)
PT
60
±20
±82
±328
95
Total Power Dissipation (TA = 25°C) PT 1.5
Channel Temperature
Tch 150
Storage Temperature
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
Tstg –55 to +150
IAS 45
EAS 202
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
5 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
THERMAL RESISTANCE
5 Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.32
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14130EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999
1 page | ||
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| PDF Descargar | [ Datasheet 2SK3353-Z.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK3353-S | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK3353-Z | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
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