MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
The 2SK3107 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK3107 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
1.6 ± 0.1
0 to 0.1
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
5 Total Power Dissipation Note2
Tstg –55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13802EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.