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Número de pieza | 2SK30ATM | |
Descripción | Silicon N Channel Junction Type Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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No Preview Available ! 2SK30ATM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and
DC-AC High Input Impedance Amplifier Circuit
Applications
Unit: mm
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5 dB (typ.)
(VDS = 15 V, VGS = 0, RG = 100 kΩ, f = 120 Hz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS −50 V
Gate current
IG 10 mA
Drain power dissipation
PD 100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
JEDEC
TO-92
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1C
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
(Note)
VDS = 10 V, VGS = 0
VGS (OFF)
⎪Yfs⎪
VDS = 10 V, ID = 0.1 μA
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss VGS = 0, VDS = 0, f = 1 MHz
Crss
VGD = −10 V, VDS = 0, f = 1 MHz
NF VDS = 15 V, VGS = 0
RG = 100 kΩ, f = 120 Hz
⎯ ⎯ −1.0 nA
−50 ⎯
⎯
V
0.3 ⎯ 6.5 mA
−0.4 ⎯ −5.0 V
1.2 ⎯
⎯ mS
⎯ 8.2 ⎯ pF
⎯ 2.6 ⎯ pF
⎯ 0.5 5.0 dB
Note: IDSS classification R: 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50
1 2007-11-01
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SK30ATM.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK30ATM | Silicon N Channel Junction Type Transistor | Toshiba Semiconductor |
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