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2SK3054のメーカーはNECです、この部品の機能は「N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING」です。 |
部品番号 | 2SK3054 |
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部品説明 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューと2SK3054ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3054
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The 2SK3054 is a switching device which can be driven
directly by a 2.5-V power source.
The 2SK3054 has excellent switching characteristics,
and is suitable for use as a high-speed switching device
in digital circuits.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3054
SC-70
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS= 0 V) VDSS
50
Gate to Source Voltage (VDS= 0 V)
VGSS
±7
Drain Current (DC)
Drain Current (pulse) Note
ID(DC)
ID(pulse)
±0.1
±0.2
Total Power Dissipation
PT 150
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Note PW ≤ 10 ms, Duty cycle ≤ 50 %
V
V
A
A
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14209EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999
1 Page 2SK3054
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
100 300
250
80
200
60
150
40
100
20 50
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
0 30 60 90 120 150 180
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
Pulsed
80
60
5
40
VGS = 4.5 V
VGS = 4.0 V
VGS = 2.5 V
20
FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = 150 ˚C
1 75 ˚C
25 ˚C
−25 ˚C
0.1
0 0.5 1.0 1.5 2.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
VDS = 3 V
ID = 1 µA
1.5
1.0
0.01
0
VDS = 3 V
123 4 5 67
VGS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
VDS = 5 V
f = 1 kHz
200
100
5
10
0.5 0
50 100
Tch - Channel Temperature - ˚C
150
1 10 100 200
ID - Drain Current - mA
Data Sheet D14209EJ2V0DS00
3
3Pages PACKAGE DRAWING (Unit: mm)
SC-70
2.1±0.1
1.25±0.1
2
Electrode
Connection
3 1. Source
1 2. Gate
3. Drain
Marking
2SK3054
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode Source
Marking : G25
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
6 Data Sheet D14209EJ2V0DS00
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 2SK3054 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SK3050 | Small Switching | ROHM Semiconductor |
2SK3051 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |
2SK3053 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
2SK3054 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | NEC |