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PDF 2SK2955 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2955 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2955 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SK2955
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.010 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
TO–3P
ADE-208-564B (Z)
3rd. Edition
Jun 1998
D
G
1. Gate
1
2
3
2. Drain
(Flange)
3. Source
S
1 page  
2SK2955
Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I DR (A)
10000
5000
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
200 Crss
100 VGS = 0
f = 1 MHz
50
0 10
20
30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 45 A
20
80
60 VDS
VGS
16
V DD = 10 V
25 V 12
50 V
40 8
20 V DD = 50 V
25 V
4
10 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
1000
500
Switching Characteristics
t d(off)
200 t f
100 t r
50
t d(on)
20 VGS = 10 V, V DD = 30 V
PW = 10 µs, duty < 1 %
10
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SK2955.PDF ] | |
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