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2SK2926 の電気的特性と機能

2SK2926のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N Channel MOS FET High Speed Power Switching」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK2926
部品説明 Silicon N Channel MOS FET High Speed Power Switching
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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2SK2926 Datasheet, 2SK2926 PDF,ピン配置, 機能
2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.042typ.
4V gate drive devices.
High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
ADE-208-535
1st. Edition

1 Page





2SK2926 pdf, ピン配列
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Zero gate voltege drain
current
I DSS
Gate to source leak current IGSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
RDS(on)
Forward transfer admittance |yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse trr
recovery time
Note: 1. Pulse test
Min
60
±20
1.5
7
2SK2926(L), 2SK2926(S)
Typ Max Unit
——V
——V
— 10 µA
0.042
0.065
11
500
260
110
10
80
100
110
1.0
±10
2.5
0.055
0.11
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
55 — ns
Test Conditions
ID = 10mA, VGS = 0
IG = ±100µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16V, VDS = 0
ID = 1mA, VDS = 10V
ID = 8A, VGS = 10V*1
ID = 8A, VGS = 4V*1
ID = 8A, VDS = 10V*1
VDS = 10V
VGS = 0
f = 1MHz
VGS = 10V, ID = 8A
RL = 3.75
IF = 15A, VGS = 0
IF = 15A, VGS = 0
diF/ dt = 50A/µs
3


3Pages


2SK2926 電子部品, 半導体
2SK2926(L), 2SK2926(S)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200 VGS = 0, Ta = 25 °C
100
50
20
10
5
0.1 0.2 0.5 1 2 5 10 20
Reverse Drain Current I DR (A)
2000
1000
500
Typical Capacitance vs.
Drain to Source Voltage
Ciss
200
Coss
100
50 Crss
20 VGS = 0
10 f = 1 MHz
0 10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 15A
80
VDS
60
40
VGS
V DD = 10 V
25 V
50 V
20
16
12
8
20 V DD = 50 V
25 V
4
10 V
0
0 8 16 24 32 400
Gate Charge Qg (nc)
1000
Switching Characteristics
300
t d(off)
100
30 t f t r
t d(on)
10
3
1
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.5 1 2 5 10 20
Drain Current I D (A)
6

6 Page



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