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Datasheet 2SK2912S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 2SK2912S | Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-495 1st. Edition Features
• Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. |
Hitachi Semiconductor |
2SK29 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
2SK2961 | Silicon N Channel MOS Type Field Effect Transistor |
Toshiba Semiconductor |
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2SK2996 | SILICON N CHANNEL MOS TYPE(HIGH SPEED/ HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR) |
Toshiba Semiconductor |
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2SK2973 | RF POWER MOS FET(VHF/UHF power amplifiers) |
Mitsubishi Electric Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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