|
|
2SK2854のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon N Channel MOS Type Field Effect Transistor」です。 |
部品番号 | 2SK2854 |
| |
部品説明 | Silicon N Channel MOS Type Field Effect Transistor | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK2854ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
2SK2854
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK2854
UHF BAND AMPLIFIER APPLICATION
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
PD (Note 1)
Tch
Tstg
10
±6
0.5
0.5
150
−55~150
V
V
A
W
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
JEITA
TOSHIBA
—
SC−62
2−5K1D
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Part No. (or abbreviation code)
UP
Lot No.
12
1. Gate
2. Source
3. Drain
3
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01
1 Page 2SK2854
Note 3: These are only typical curves and devices are not necessarily guaranteed at these curves.
3 2007-11-01
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SK2854 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SK2850 | N-Channel Enhancement Mode Power MOSFET | Fuji Electric |
2SK2850-01 | N-Channel Enhancement Mode Power MOSFET | Fuji Electric |
2SK2851 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2854 | Silicon N Channel MOS Type Field Effect Transistor | Toshiba Semiconductor |