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2SK2826-S の電気的特性と機能

2SK2826-SのメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK2826-S
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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2SK2826-S Datasheet, 2SK2826-S PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
RDS(on)1 = 6.5 m(MAX.) (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 m(MAX.) (VGS = 4.0 V, ID = 35 A)
Low Ciss : Ciss = 7200 pF (TYP.)
Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK2826
2SK2826-S
2SK2826-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, –10
±70
±280
100
1.5
150
–55 to + 150
70
490
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µ s, Duty cycle 1 %
2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1998

1 Page





2SK2826-S pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
ID(pulse)
PW
RD(Sa(otn)VLGimSit=e1d0 V) ID(DC)
1
ms
100
=
µs
10
µs
Power DissipaDt1iCo0n0Lmi1ms0itmeds
TC = 25˚C
1 Single Pulse
0.1
1
10 100
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
Pulsed
100
10
TA = -25˚C
1 25˚C
75˚C
125˚C
VDS = 10 V
0 2 4 68
VGS - Gate to Source Voltage - V
2SK2826
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
100
80
60
VGS =10 V
40
VGS = 4.0 V
20
0 0.2 0.4 0.6 0.8
VDS - Drain to Source Voltage - V
Data Sheet D11273EJ2V0DS00
3


3Pages


2SK2826-S 電子部品, 半導体
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 70 A
10
EAS = 490 mJ
1.0
VDD = 30 V
VGS = 20 V 0 V
RG = 25
10 µ
100 µ
1m
L - Inductive Load - H
10 m
2SK2826
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25
VGS = 20 V 0 V
IAS 70 A
120
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D11273EJ2V0DS00

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
2SK2826-S

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC
2SK2826-ZJ

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC
NEC


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