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PDF 2SK2759-01R Data sheet ( 特性 )

部品番号 2SK2759-01R
部品説明 N-channel MOS-FET
メーカ Fuji Electric
ロゴ Fuji Electric ロゴ 

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2SK2759-01R Datasheet, 2SK2759-01R PDF,ピン配置, 機能
2SK2759-01R
FAP-IIS Series
> Features
- High Speed Switching
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Voltage
- VGS = ± 30V Guarantee
- Repetitive Avalanche Rated
> Applications
- Switching Regulators
- UPS
- DC-DC converters
- General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
V DS
500
Continous Drain Current
I D 15
Pulsed Drain Current
I D(puls)
60
Gate-Source-Voltage
V GS
±30
Repetitive or Non-Repetitive (Tch 150°C)
Avalanche Energy
I AR
E AS
15
108
Max. Power Dissipation
P D 80
Operating and Storage Temperature Range
T ch
150
T stg
-55 ~ +150
N-channel MOS-FET
500V 0,55Ω 15A 80W
> Outline Drawing
> Equivalent Circuit
Unit
V
A
A
V
A
mJ
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=500V Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±30V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=7,5A
VGS=10V
Forward Transconductance
g fs
ID=7,5A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=300V
t r ID=15A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=IDR VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
500
3,5
4,5
15
Typ. Max.
4,0
10
0,2
10
0,44
9
1400
250
110
30
110
90
55
4,5
500
1,0
100
0,55
2100
380
170
50
170
140
90
1,1 1,65
500
8
Unit
V
V
µA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
30 °C/W
1,56 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

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