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PDF 2SK2493 Data sheet ( Hoja de datos )

Número de pieza 2SK2493
Descripción Silicon N Channel MOS Type Field Effect Transistor
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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2SK2493
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2493
Chopper Regulator and DCDC Converter Applications
z 2.5-V gate drive
z Low drainsource ON resistance : RDS (ON) = 0.08 m(typ.)
z High forward transfer admittance : |Yfs| = 8.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 16 V)
z Enhancement mode : Vth = 0.5~1.1 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
Tch
Tstg
16
16
±8
5
20
20
150
55~150
V
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
6.25 °C / W
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2006-11-16

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2SK2493 pdf
2SK2493
5 2006-11-16

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