|
|
PDF 2SK2478 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2478 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SK2478 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2478
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2478 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 7.5 Ω (VGS = 10 V, ID = 1.0 A)
• Low Ciss Ciss = 485 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±2.0
A
Drain Current (pulse)*
ID(pulse) ±8.0
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 2.0 A
Single Avalanche Energy**
EAS 16.5 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10270EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
0 ID = 1 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
10
1.0
1.0
Coss
Crss
10 100
VDS - Drain to Source Voltage - V
1 000
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
1.0
0.1
1.0 10
ID - Drain Current - A
100
2SK2478
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
VGS = 0 V
1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
tr
td(off)
tf
td(on)
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800 16
ID = 2 A
14
600 VDD = 450 V
300 V
150 V
400
12
10
VGS
8
6
200 4
VDS
0 6 12 18
Qg - Gate Charge - nC
2
0
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2478.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SK247 | SI N CHANNEL JUCTION |  Panasonic Semiconductor |
| 2SK2470-01MR | N-channel MOS-FET |  Fuji Electric |
| 2SK2471-01 | N-channel MOS-FET | Fuji Electric |
| 2SK2475 | VX-2 Series Power MOSFET(500V 12A) |  Shindengen Electric Mfg.Co.Ltd |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |