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2SK2413 の電気的特性と機能

2SK2413のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK2413
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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2SK2413 Datasheet, 2SK2413 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2413
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2413 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
Low On-Resistance
RDS(on)1 = 70 mMAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mMAX. (@ VGS = 4 V, ID = 5.0 A)
Low Ciss Ciss = 860 pF TYP.
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
8.0 ±0.2
4.5 ±0.2
1 23
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±10 A
Drain Current (pulse)*
ID(pulse)
±40 A
Total Power Dissipation (TA = 25 ˚C) PT
1.8 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
10 A
Single Avalanche Energy**
EAS
10 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
1.4 ±0.2
1.4 ±0.2
0.5 ±0.1
0.5 ±0.1 0.5 ±0.1
1. Gate
2. Drain
3. Source
MP-10 (ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2494
(O. D. No. TC-8032)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994

1 Page





2SK2413 pdf, ピン配列
2SK2413
Radial Tape Specification
P2 P
A1
P
T
h h
F1 F2
P0
d
D0
Dimension (unit: mm)
Item
Component Body Length along Tape
Component Body Height
Component Body Width
Component Lead Width Dimension
Lead Wire Enclosure
Component Center Pitch
Feedhole Pitch
Feedhole Center to Center Lead
A1
A
T
d
I1
P
P0
P2
Component Lead Pitch
F1, F2
Deflection Front or Rear
Deflection Left or Right
h
P
Carrier Strip Width
W
Adhesive Tape Width
Feedhole Location
Adhesive Tape Position
Height of Seating Plane
Feedhole to upper of Component
Feedhole to Bottom of Component
Tape Feedhole Diameter
Overall Taped Package Thickness
W0
W1
W2
H0
H1
H
D0
t
8.0 ± 0.2
13.0 ± 0.2
4.5 ± 0.2
0.5 ± 0.1
2.5 MIN.
12.7 ± 1.0
12.7 ± 0.3
6.35 ± 0.5
+0.4
2.5
–0.1
±1.0
±1.3
+1.0
18.0
–0.5
5.0 MIN.
9.0 ± 0.5
0.7 MIN.
16.0 ± 0.5
32.2 MAX.
20.0 MAX.
4.0 ± 0.2
0.7 ± 0.2
3


3Pages


2SK2413 電子部品, 半導体
2SK2413
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
120
VGS = 4 V
80
VGS = 10 V
40
0
–50
ID = 5 A
0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
1 10 100
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 50 A/µs
VGS = 0
1.0 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10 V
10
1
VGS = 0
0.1
0
1.0
VSD - Source to Drain Voltage - V
2.0
1000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td (off)
tf
tr
td (on)
VDD = 30 V
VGS = 10 V
RG = 10
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 ID = 10 A 16
70 VDD = 48 V 14
60
50 VDS
12
VGS 10
40 8
30 6
20 4
10 2
00
0 10 20 30 40
Qg - Gate Charge - nC
6

6 Page



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