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2SK2357 の電気的特性と機能

2SK2357のメーカーはNECです、この部品の機能は「SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK2357
部品説明 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
メーカ NEC
ロゴ NEC ロゴ 




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2SK2357 Datasheet, 2SK2357 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2357/2SK2358
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2357: RDS(on) = 0.9 (VGS = 10 V, ID = 3.0 A)
2SK2358: RDS(on) = 1.0 (VGS = 10 V, ID = 3.0 A)
Low Ciss Ciss = 1050 pF TYP.
High Avalanche Capability Ratings
Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (2SK2357/2358) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±6.0
A
Drain Current (pulse)*
ID(pulse) ±24
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 35 W
Total Power Dissipation (Ta = 25 ˚C)
PT2 2.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS 6.0 A
Single Avalanche Energy**
EAS 17 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
1 23
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
The information in this document is subject to change without notice.
Document No. D11392EJ3V0DS00 (3rd edition)
(Previous No. TC-2498)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994

1 Page





2SK2357 pdf, ピン配列
TYPICAL CHARACTERISTICS (TA = 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
1.0
Tc
R(DaSt(oVn)GLS i=m1ite0dV)
ID (DC)
Power
= 25 °C
ID (pulse) PW
=
100
Dissipa1t0io0nm1L0ismmites1dms
s
10
s
0.1 Single Pulse
0.1 10 100 1000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
50 Pulsed
10
1
0.1
0.05
0
Ta = –25 °C
25 °C
75 °C
125 °C
5 10 15
VGS - Gate to Source Voltage - V
2SK2357/2SK2358
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0 20 40 60 80 100 120 140 160
Tc - Case Temperature - °C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10 VGS = 20 V
10 V
8V
8 6V
Pulsed
6
4
2
0 4 8 12 16
VDS - Drain to Source Voltage - V
3


3Pages


2SK2357 電子部品, 半導体
SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
20
ID(peak) = IAS
RG = 25
VGS = 20 V 0 V
VDD = 150 V
15
EAS = 17 mJ
10
5
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - °C
2SK2357/2SK2358
SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD
100 RG = 25
VDD = 150 V
VGS = 20 V 0
Starting Tch = 25°C
10
IAS = 6.0 A
1.0
EAS = 17 mJ
100 µ
1.0 m
10 m
L - Inductive Load - H
100 m
6

6 Page



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共有リンク

Link :


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