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PDF 2SK2356-Z Data sheet ( Hoja de datos )
| Número de pieza | 2SK2356-Z | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel
MOS Field Effect Transistor designed for high voltage switching
applications.
FEATURES
• Low On-Resistance
2SK2355: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2356: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2355/2356) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±5.0
A
Drain Current (pulse)*
ID(pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C)
PT1 50 W
Total Power Dissipation (Ta = 25 ˚C)
PT2 1.5 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS 5.0 A
Single Avalanche Energy**
EAS 17.4 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
4.8 MAX.
3.6 ±0.2
10.0
1.3 ±0.2
4
1 23
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.54
2.8 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0.5(R0).8R)
0.5 ±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-25Z (TO-220 SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Source
The information in this document is subject to change without notice.
Document No. D11391EJ3V0DS00 (3rd edition)
(Previous No. TC-2500)
Date Published March 1998 N CP(K)
Printed in Japan
©
1994
1 page  
2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
3.0
ID = 4 A
ID = 2 A
2.0
1.0
VGS = 10 V
0
–50 0 50 100 150
Tch - Channel Temperature - °C
5 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1.0 MHz
Ciss
100
Coss
10
5
1
Crss
10 100
VDS - Drain to Source Voltage - V
1000
5 000
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
50
0.1
1.0 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
Pulsed
10
VGS = 0
10 V
1.0
0.1
0.05
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
500
100 tf
tr
td(off)
10 td(on)
1.0
0.5
0.1
VDD = 100 V
VGS = 10 V
RG = 25 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 5.0 A
VDD = 400 V
14
300 250 V VGS 12
125 V
10
200 8
6
100 4
2
VDS
0
0 5 10 15 20
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2356-Z.PDF ] | |
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