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PDF 2SK2353 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2353 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2353/2SK2354
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2353: RDS(on) = 1.4 Ω (VGS = 10 V, ID = 2.5 A)
2SK2354: RDS(on) = 1.5 Ω (VGS = 10 V, ID = 2.5 A)
• Low Ciss Ciss = 670 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3.
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2353/2354) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.5
A
Drain Current (pulse)*
ID(pulse) ±18
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
30 W
Total Power Dissipation (Ta = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.5 A
Single Avalanche Energy**
EAS 17.4 mJ
1 23
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Source
Document No. TC-2499
(O. D. No. TC-8047)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
1 page  
2SK2353/2SK2354
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
4.0
ID = 4 A
3.0
ID = 2 A
2.0
1.0
0 –50
VGS = 10 V
0 50 100 150
Tch - Channel Temperature - ˚C
5 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1.0 MHz
1 000
Ciss
100
Coss
10
5
1
Crss
10 100
VDS - Drain to Source Voltage - V
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
Pulsed
10
10 V
VGS = 0
1.0
0.1
0.05
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
500
tr
100 tf
td(off)
10 td(on)
1.0
0.5
0.1
VDD = 100 V
VGS = 10 V
RG = 25 Ω
1.0 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
500
di/dt = 50 A/ns
VGS = 0
400
300
200
100
0
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 4.5 A
VDD = 400 V
14
300 250 V VGS 12
125 V
10
200 8
6
100 4
2
VDS
0 5 10 15 20
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2353.PDF ] | |
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