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Datasheet 2SK217 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SK217 | Silicon N-Channel Junction FET 2SK217
Silicon N-Channel Junction FET
Application
VHF amplifier
Outline
MPAK
3 1 2
1. Gate 2. Drain 3. Source
2SK217
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pc |  Hitachi Semiconductor | mosfet |
| 2 | 2SK2170 | N-Channel Junction Silicon FET Ordering number : ENN4858A
2SK2170
2SK2170 N-Channel Junction Silicon FET
Impedance Converter Applications
Applications
• Low-frequency amplifier, analog switch, constant current source.
Features
• Ultrasmall-sized package permitting 2SK2170 applied sets to be made small and slim.
Specificat |  Sanyo Semicon Device | mosfet |
| 3 | 2SK2171 | N-Channel Junction Silicon FET Ordering number:ENN4871
N-Channel Junction Silicon FET
2SK2171
High-Frequency, Low-Frequency Amplifier Analog Switch Applications
Features
· Adoption of FBET process. · Large | yfs |. · Small Ciss. · High PD allowable power dissipation.
Package Dimensions
unit:mm 2125
[2SK2171]
4.5 1.6
1.5
| Sanyo Semicon Device | mosfet |
| 4 | 2SK2173 | Silicon N Channel MOS Type Field Effect Transistor 2SK2173
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2173
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 40 |  Toshiba Semiconductor | transistor |
| 5 | 2SK2177 | VX-2 Series Power MOSFET(500V 1A) SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2177
(F1E50VX2)
500V 1A
FEATURES •œ Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. •œ The static Rds(on) is small. •œ The switching time is fast. APPLICATION
•œ Switching power suppl |  Shindengen Electric Mfg.Co.Ltd | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu  Panasonic Semiconductor mosfet | | |
| 2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
| 3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
| 4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
| 5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
| 6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
| 7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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