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PDF 2SK2162 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2162 | |
| Descripción | Silicon N-Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
2SK2162
2SK2162
Audio-Frequency Power Amplifier Applications
• High breakdown voltage: VDSS = 180 V
• High forward transfer admittance: |Yfs| = 0.7 S (typ.)
• Complementary to 2SJ338
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
VDSS
VGSS
ID
PD
Tch
Tstg
180
±20
1
20
150
−55~150
V
V
A
W
°C
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1 2006-11-21
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK2162.PDF ] | |
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