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2SK2124のメーカーはPanasonic Semiconductorです、この部品の機能は「Silicon N-Channel Power F-MOS FET」です。 |
部品番号 | 2SK2124 |
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部品説明 | Silicon N-Channel Power F-MOS FET | ||
メーカ | Panasonic Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK2124ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Power F-MOS FETs
2SK2124
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ
q VGSS = ±30V guaranteed
q High-speed switching: tf = 60ns
q No secondary breakdown
s Applications
q Contactless relay
q Diving circuit for a solenoid
q Driving circuit for a motor
q Control equipment
q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Avalanche energy capacity
VDSS
VGSS
ID
IDP
EAS*
450
±30
±8
±16
130
Allowable power
dissipation
TC = 25°C
Ta = 25°C
PD
50
2
Channel temperature
Storage temperature
Tch 150
Tstg −55 to +150
* L = 4.1mH, IL = 8A, VDD = 50V, 1 pulse
Unit
V
V
A
A
mJ
W
°C
°C
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Vth
Drain to Source ON-resistance RDS(on)
Forward transfer admittance
| Yfs |
Diode forward voltage
VDSF
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time (delay time)
td(on)
Rise time
tr
Fall time
tf
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case Rth(ch-c)
VDS = 360V, VGS = 0
VGS = ±30V, VDS = 0
ID = 1mA, VGS = 0
VDS = 25V, ID = 1mA
VGS = 10V, ID = 4A
VDS = 25V, ID = 4A
IDR = 8A, VGS = 0
VDS = 20V, VGS = 0, f = 1MHz
VGS = 10V, ID = 4A
VDD = 150V, RL = 37.5Ω
9.9±0.3
φ3.2±0.1
unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7 123
1: Gate
2: Drain
3: Source
TO-220E Package
min typ max Unit
0.1 mA
±1 µA
450 V
2 5V
0.56 0.75
Ω
35
S
−1.7 V
1300
pF
160 pF
70 pF
25 ns
45 ns
50 ns
150 ns
2.5 °C/W
1
1 Page Power F-MOS FETs
10000
3000
1000
Ciss, Coss, Crss VDS
f=1MHz
TC=25˚C
Ciss
300
100
Coss
30
10 Crss
3
1
0 50 100 150 200 250
Drain to source voltage VDS (V)
VDS, VGS Qg
400 16
ID=8A
350 TC=25˚C 14
300 12
250 VDS
200
10
8
150 6
100
VGS
50
4
2
00
0 10 20 30 40 50 60
Gate charge amount Qg (nC)
2SK2124
td(on), tr, tf, td(off) ID
300
VDD=150V
VGS=10V
250 TC=25˚C
200
150
100
50
0
0
td(off)
tf
tr
td(on)
2468
Drain current ID (A)
10
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 2SK2124 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SK212 | N-Channel Junction Silicon FET | Sanyo Semicon Device |
2SK212 | Silicon N Channel Junction FETs | Xiao sheng Elctronic |
2SK2123 | Silicon N-Channel Power F-MOS FET | Panasonic Semiconductor |
2SK2124 | Silicon N-Channel Power F-MOS FET | Panasonic Semiconductor |