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Datasheet 2SK212 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SK212 | N-Channel Junction Silicon FET Ordering number:EN661E
N-Channel Junction Silicon FET
2SK212
FM Tuner Applications
Features
· Ideal for FM tuners in low-voltage radios, car radios, etc.
· Small-sized package permitting 2SK212-applied sets to be made small and slim.
· Small Crss (Crss=0.04pF typ). · High yfs(yfs=6 |  Sanyo Semicon Device | mosfet |
| 2 | 2SK212 | Silicon N Channel Junction FETs Silicon N Channel Junction FETs
LH03 series of products interconvertible
2SK212
Xiaosheng
D Symbol
Applications For charge sensor, meter amplifier circuit,
rheostat , chopper and gain controller for AGC, electronic switch.
FM/VHF tuners in car radios
Electrical characteristics (Ta=25℃)
SG
Packa |  Xiao sheng Elctronic | mosfet |
| 3 | 2SK2123 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2123
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
4.1±0.2 8.0±0.2 Solder Dip
|  Panasonic Semiconductor | mosfet |
| 4 | 2SK2124 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2124
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 60ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
4.1±0.2 8.0±0.2 Solder Dip
| Panasonic Semiconductor | mosfet |
| 5 | 2SK2125 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2125
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
4.1±0.2 8.0±0.2 Solder Dip | Panasonic Semiconductor | mosfet |
2SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SK0065 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu Panasonic Semiconductor mosfet | | |
| 2 | 2SK0123 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0123 (2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q High mutual conductance gm q Low noise voltage of NV
1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚
Unit: mm
0.40+0.10 � Panasonic Semiconductor mosfet | | |
| 3 | 2SK0198 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0198 (2SK198)
Silicon N-Channel Junction FET
For low-frequency amplification
0.40+0.10 –0.05
Unit: mm
0.16+0.10 –0.06
s Features
q High mutual conductance gm q Low noise type q Mini-type package, allowing downsizing of the sets and automatic insertion t Panasonic Semiconductor mosfet | | |
| 4 | 2SK0301 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.0±0.2 5.1±0.2 4.0±0.2
unit: mm
I Features
13.5±0.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 –0.1
+0.2
0.45 –0.1
+0.2
I Absolute Panasonic Semiconductor mosfet | | |
| 5 | 2SK0601 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
For switching
unit: mm
s Features
q Low ON-resistance RDS(on) q High-speed switching q Allowing to be driven directly by CMOS and TTL q Mini-power type package, allowing downsizing of the sets and automatic insertion through the tape Panasonic Semiconductor mosfet | | |
| 6 | 2SK0614 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5.0±0.2
4.0±0.2
0.7±0.1
0.7±0.2 12.9±0.5
G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25° Panasonic Semiconductor mosfet | | |
| 7 | 2SK0615 | SILICON N-CHANNEL MOS FET Silicon MOS FETs (Small Signal)
2SK0615 (2SK615)
Silicon N-Channel MOS FET
For switching
Unit: mm
I Features
2.0±0.2
G Low ON-resistance G High-speed switching G Allowing to be driven directly by CMOS and TTL G M type package, allowing easy automatic and manual insertion as well as stand-alone Panasonic Semiconductor mosfet | |
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