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2SK2110 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SK2110
部品説明 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
メーカ NEC
ロゴ NEC ロゴ 

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2SK2110 Datasheet, 2SK2110 PDF,ピン配置, 機能
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2110
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2110 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
• Low ON resistance
RDS(on) = 1.5 MAX. @VGS = 4.0 V, ID = 0.3 A
• High switching speed
ton + toff < 100 ns
• Low parasitic capacitance
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
1.5 ± 0.1
SDG
0.42
±0.06 1.5
0.42
0.47 ±0.06
±0.06
3.0
0.41+–00..0053
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Internal diode
Gate
protection
diode
Source (S)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NT
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
VGS = 0
VDS = 0
TEST CONDITIONS
PW 10 ms,
Duty cycle 50 %
16 cm2 × 0.7 mm, ceramic substrate used
RATING
100
±20
±0.5
±1.0
2.0
150
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
Document No. D11230EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996

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