DataSheet.jp

2SK211 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 2SK211
部品説明 Silicon N Channel Junction Type Transistor
メーカ Toshiba Semiconductor
ロゴ Toshiba Semiconductor ロゴ 

Total 6 pages
		

No Preview Available !

2SK211 Datasheet, 2SK211 PDF,ピン配置, 機能
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Unit: mm
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admitance: |Yfs| = 9 mS (typ.)
Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
18
10
150
125
55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Marking
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
IGSS
VGS = −0.5 V, VDS = 0 V
V (BR) GDO IG = −100 μA
IDSS
(Note)
VGS = 0 V, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 μA
Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
VGD = −10 V, f = 1 MHz
GPS
VDD = 10 V, f = 100 MHz (Figure)
NF VDD = 10 V, f = 100 MHz (Figure)
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
1
Min Typ. Max Unit
⎯ ⎯ −10 nA
18
V
1.0 10 mA
0.4 ⎯ −4.0 V
9 mS
6.0 pF
⎯ ⎯ 0.15 pF
18 dB
2.5 3.5 dB
2007-11-01

1 Page





ページ 合計 : 6 ページ
PDF
ダウンロード
[ 2SK211.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
2SK210

There is a function of N CHANNEL JUNCTION TYPE (FM TUNER/ VHF BAND AMPLIFIER APPLICATIONS).

Toshiba Semiconductor
Toshiba Semiconductor
2SK2100-01MR

There is a function of Power MOSFET.

Fuji Electric
Fuji Electric
2SK2101-01MR

There is a function of N-channel MOS-FET.

Fuji Electric
Fuji Electric
2SK2103

There is a function of Small switching (30V/ 2A).

Rohm
Rohm

多くを見つけるデータシート

部品番号部品説明メーカ
82S129

The 82S126 and 82S129 are field programmable, which means that custom patterns are immediately available by following the Signetics Generic fusing procedure. 1K-bit TTL Bipolar PROM, Address access time : 50ns max.

NXP
NXP
D1695

This part is a darlington connection NPN silicon epitaxial transistor. The 2SD1695 is a Darlington connection transistor and incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.

NEC
NEC

www.DataSheet.jp    |   2018   |  メール    |   最新    |   Sitemap