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2SK2084SのメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel MOS FET」です。 |
部品番号 | 2SK2084S |
| |
部品説明 | Silicon N-Channel MOS FET | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK2084Sダウンロード(pdfファイル)リンクがあります。 Total 10 pages
2SK2084(L), 2SK2084(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
DPAK-2
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
1 Page 2SK2084(L), 2SK2084(S)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
20
Gate to source breakdown
voltage
V(BR)GSS
±20
Gate to source leak current IGSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static drain to source on state RDS(on)
resistance
—
—
1.0
—
—
Forward transfer admittance |yfs|
5
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse Test
Ciss
Coss
Crss
t d(on)
tr
t d(off)
tf
VDF
t rr
—
—
—
—
—
—
—
—
—
Typ Max Unit
— —V
— —V
— ±10 µA
— 100 µA
— 2.5 V
0.04 0.053 Ω
0.058 0.075 Ω
9 —S
800 —
680 —
165 —
15 —
60 —
100 —
80 —
0.9 —
pF
pF
pF
ns
ns
ns
ns
V
80 — ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 16 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 4 A
VGS = 10 V*1
ID = 4 A
VGS = 4 V*1
ID = 4 A
VDS = 10 V*1
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 5 Ω
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0,
diF / dt = 20 A / µs
3
3Pages 2SK2084(L), 2SK2084(S)
Body to Drain Diode Reverse
Recovery Time
200
100
50
di / dt = 20 A / µs
VGS = 0, Ta = 25 °C
20
10
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
Coss
100
VGS = 0
f = 1 MHz
Crss
10
0 4 8 12 16 20
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50 20
40 VDD = 20 V
10 V
5V
30
VDS
20
VGS 16
12
8
10 VDD = 20 V
10 V
4
5V 0
0 8 16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
200
t d(off)
100
50
VGS = 10 V
V DD = 20 V
PW = 5 µs
20 duty < 1 %
tf
tr
t d(on)
10
0.1
0.2 0.5 1
Drain Current
25
I D (A)
10
6
6 Page | |||
ページ | 合計 : 10 ページ | ||
|
PDF ダウンロード | [ 2SK2084S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SK2084 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK2084L | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK2084S | Silicon N-Channel MOS FET | Hitachi Semiconductor |