(PDF) 2SK2007 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK2007
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2007 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter, Motor Control Outline TO-3P D G1 2 3 1. Gate 2. Drain (Flange) S 3. Source 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 4 Pulse Test 3 20 A 2 10 A 1 ID = 5 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source On State Resistance vs. Temperature 0.5 0.4 VGS = 10V Pulse Test 0.3 ID = 20 A 0.2 0.1 5 A 10 A 0 –40 0 40 80 120 Case Temperature Tc (°C) 160 2SK2007 Static Drain to Source On State Resistance vs. Drain Current 5 2 1 0.5 VGS = 10 V 0.2 0.1 0.05 1 15 V 2 5 10 20 50 100 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current 100 –25°C 30 Tc = 25°C 10 3 75°C 1 VDS = 10 V Pulse Test 0.3 0.1 0.1 0.3 1 3 10 30 Drain Current ID (A) 100 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK2007.PDF ]

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PDF 2SK2007 Data sheet ( Hoja de datos )