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2SK1636S の電気的特性と機能

2SK1636SのメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel MOS FET」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SK1636S
部品説明 Silicon N-Channel MOS FET
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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2SK1636S Datasheet, 2SK1636S PDF,ピン配置, 機能
2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain

1 Page





2SK1636S pdf, ピン配列
2SK1636(L), 2SK1636(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 250
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static Drain to source on state RDS(on)
resistance
2.0
Forward transfer admittance |yfs|
6.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
Body to drain diode reverse
recovery time
t rr
Note 1. Pulse test
Typ Max
——
——
±10
— 250
— 3.0
0.22 0.27
10.0
1250
510
85
24
85
110
60
1.0
400 —
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *1
ID = 8 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
3


3Pages


2SK1636S 電子部品, 半導体
2SK1636(L), 2SK1636(S)
1,000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
12
5 10 20
Reverse Drain Current IDR (A)
50
Dynamic Input Characteristics
500
VDD = 50 V
100 V
400 200 V
20
16
300
VDS
200
VGS
12
ID = 15 A
8
100 VDD = 200 V
100 V
4
50 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
100
50
20
10
5
0.2
td (off)
tf
tr
td (on)
VGS = 10 V, PW = 2 µs
duty < 1%
0.5 1 2
5 10 20
Drain Current ID (A)
6

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
2SK1636

Silicon N-Channel MOS FET

Hitachi Semiconductor
Hitachi Semiconductor
2SK1636L

Silicon N-Channel MOS FET

Hitachi Semiconductor
Hitachi Semiconductor
2SK1636S

Silicon N-Channel MOS FET

Hitachi Semiconductor
Hitachi Semiconductor


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