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2SK1636SのメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel MOS FET」です。 |
部品番号 | 2SK1636S |
| |
部品説明 | Silicon N-Channel MOS FET | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK1636Sダウンロード(pdfファイル)リンクがあります。 Total 9 pages
2SK1636(L), 2SK1636(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
LDPAK
4
4
123
D
12
3
G
S
1. Gate
2. Drain
3. Source
4. Drain
1 Page 2SK1636(L), 2SK1636(S)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 250
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
Static Drain to source on state RDS(on)
resistance
—
—
2.0
—
Forward transfer admittance |yfs|
6.0
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note 1. Pulse test
Typ Max
——
——
— ±10
— 250
— 3.0
0.22 0.27
10.0
1250
510
85
24
85
110
60
1.0
—
—
—
—
—
—
—
—
—
400 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 8 A, VGS = 10 V *1
ID = 8 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 8 A, VGS = 10 V,
RL = 3.75 Ω
IF = 15 A, VGS = 0
IF = 15 A, VGS = 0,
diF/dt = 100 A/µs
3
3Pages 2SK1636(L), 2SK1636(S)
1,000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
10
0.5
di/dt = 100 A/µs, Ta = 25°C
VGS = 0
12
5 10 20
Reverse Drain Current IDR (A)
50
Dynamic Input Characteristics
500
VDD = 50 V
100 V
400 200 V
20
16
300
VDS
200
VGS
12
ID = 15 A
8
100 VDD = 200 V
100 V
4
50 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
VGS = 0
f = 1 MHz
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
200
100
50
20
10
5
0.2
td (off)
tf
tr
td (on)
VGS = 10 V, PW = 2 µs
duty < 1%
0.5 1 2
5 10 20
Drain Current ID (A)
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
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PDF ダウンロード | [ 2SK1636S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SK1636 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1636L | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1636S | Silicon N-Channel MOS FET | Hitachi Semiconductor |