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2SK1522のメーカーはHitachi Semiconductorです、この部品の機能は「Silicon N-Channel MOS FET」です。 |
部品番号 | 2SK1522 |
| |
部品説明 | Silicon N-Channel MOS FET | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SK1522ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
2SK1521, 2SK1522
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Built-in fast recovery diode (trr = 120 ns)
• Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3PL
D
G1
2
3
1. Gate
2. Drain
3. Source
S
1 Page 2SK1521, 2SK1522
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
breakdown voltage
2SK1521 V(BR)DSS
2SK1522
450
500
Gate to source breakdown
voltage
V(BR)GSS ±30
Gate to source leak current
I GSS
Zero gate voltage 2SK1521 IDSS
drain current
2SK1522
—
—
Gate to source cutoff voltage VGS(off)
Static Drain to source 2SK1521 RDS(on)
on state resistance 2SK1522
2.0
—
—
Forward transfer admittance |yfs|
22
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
t d(on)
tr
t d(off)
tf
VDF
—
—
—
—
—
Body to drain diode reverse
recovery time
t rr
—
Note: 1. Pulse test
Typ Max Unit
——V
——V
— ±10 µA
— 250 µA
—
0.08
0.085
35
8700
2400
235
85
250
600
250
1.1
3.0
0.10
0.11
—
—
—
—
—
—
—
—
—
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
120 —
ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 25 A, VGS = 10 V *1
ID = 25 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 25 A, VGS = 10 V,
RL = 1.2 Ω
IF = 50 A, VGS = 0
IF = 50 A, VGS = 0,
diF/dt = 100 A/µs
3
3Pages 2SK1521, 2SK1522
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20 di/dt = 100 A/µs, Ta = 25°C
VGS = 0
Pulse Test
10
5
0.5 1 2
5 10 20
50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
500 20
400 VDD = 100 V
250 V
16
400 V
300 VGS
VDS
12
200 8
ID = 50 A
100 VDD = 400 V
4
250 V
100 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
100
Crss
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
5,000
2,000
Switching Characteristics
VGS = 10 V, VDD =.. 30 V
PW = 2 µs, duty < 1%
1,000
500
200
100
td (off)
tf
tr
td (on)
50
0.5 1
2
5 10 20
Drain Current ID (A)
50
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ 2SK1522 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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