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PDF 2SJ552S Data sheet ( Hoja de datos )
| Número de pieza | 2SJ552S | |
| Descripción | Silicon P Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ552S (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.042Ω typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
LDPAK
D
G
S
ADE-208-651B (Z)
3rd. Edition
Jun 1998
44
1
2
3
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 page  
2SJ552(L),2SJ552(S)
1000
500
Body–Drain Diode Reverse
Recovery Time
Pulse Test
200
100
50
20
10
–0.1
di / dt = 50 A / µs
VGS = 0, Ta = 25 °C
–0.3 –1 –3 –10 –30 –100
Reverse Drain Current I DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
Ciss
Coss
100
Crss
30
VGS = 0
10 f = 1 MHz
0 –10
–20
–30 –40
–50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
00
V DD = –10 V
–25 V
–20 –50 V
–4
V DS
–40
V GS
–8
–60
V DD = –10 V
–25 V
–80 –50 V
–12
–16
–100 I D = –20 A
0 16 32 48 64
Gate Charge Qg (nc)
–20
80
1000
500
200
100
50
Switching Characteristics
VGS = –10 V, V DD = –30 V
PW = 10 µs, duty < 1 %
td(off)
tf
tr
20 td(on)
10
–0.1 –0.3 –1 –3
Drain Current
–10 –30
I D (A)
–100
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SJ552S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SJ552 | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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| 2SJ552L | Silicon P Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
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