(PDF) 2SJ550 Datasheet - Silicon P Channel MOS FET High Speed Power Switching

Número de pieza	2SJ550
Descripción	Silicon P Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ550(L),2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK D G S ADE-208-633A (Z) 2nd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SJ550(L),2SJ550(S) Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di / dt = 50 A / µs 5 –0.1 –0.3 VGS = 0, Ta = 25 °C –1 –3 –10 –20 Reverse Drain Current I DR (A) 10000 3000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 1000 Ciss 300 Coss 100 Crss 30 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 00 VDD = –10 V –25 V –20 –50 V –4 –40 –60 VDS –80 VDD = –50 V –25 V –10 V VGS –100 I D = –15 A 0 8 16 24 32 Gate Charge Qg (nc) –8 –12 –16 –20 40 1000 500 Switching Characteristics VGS = –10 V, V DD = –30 V PW = 5 µs, duty < 1 % 200 t d(off) 100 t f 50 tr 20 t d(on) 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) 5 5 Page

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PDF 2SJ550 Data sheet ( Hoja de datos )