(PDF) 2SJ549S Datasheet - Silicon P Channel MOS FET High Speed Power Switching

Número de pieza	2SJ549S
Descripción	Silicon P Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SJ549(L),2SJ549(S) Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline LDPAK D G S ADE-208-644A (Z) 2nd. Edition Jun 1998 44 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SJ549(L),2SJ549(S) Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 10 di / dt = 50 A / µs 5 VGS = 0, Ta = 25 °C –0.1 –0.2 –0.5 –1 –2 –5 –10 Reverse Drain Current I DR (A) 2000 1000 500 Typical Capacitance vs. Drain to Source Voltage Ciss VGS = 0 f = 1 MHz 200 Crss 100 50 Coss 20 10 0 –10 –20 –30 –40 –50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 00 V DD = –10 V I D = –10 A –25 V –20 –50 V –4 –40 V DS –60 V DD = –50 V –80 –25 V –10 V V GS –100 0 8 16 24 32 Gate Charge Qg (nc) –8 –12 –16 –20 40 1000 300 100 30 10 Switching Characteristics V GS = –10 V, V DD = –30 V Pw = 5 µs, duty < 1 % t d(off) tf tr t d(on) 3 1 –0.1 –0.2 –0.5 –1 –2 –5 Drain Current I D (A) –10 5 5 Page

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PDF 2SJ549S Data sheet ( Hoja de datos )