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PDF 2SJ463 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ463 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ463A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ463A is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ463A has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5 V power source.
• Low Gate Cut-off Voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSS
–30
Gate to Source Voltage
VGSS
+20
Drain Current (DC)
Drain Current (pulse)
ID(DC)
ID(pulse)
+0.1
+0.4 Note
Total Power Dissipation PT
150
Channel Temperature
Tch
150
Storage Temperature
Tstg
–55 to +150
V
V
A
A
mW
°C
°C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
Package Drawings (unit: mm)
2.1 ±0.1
1.25 ±0.1
2
13
Marking
Equivalent Circuit
Gate
Drain
Electrode
Connection
1. Source
2. Gate
3. Drain
Internal Diode
Gate Protect
Diode
Source
Marking : H21
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
Document No. D11198EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
© 1996
1 page  
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
2SJ463A
Document No.
TEI-1202
C11531E
C10535E
MEI-1202
X10679E
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SJ463.PDF ] | |
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