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2SJ210のメーカーはNECです、この部品の機能は「P-CHANNEL MOS FET FOR SWITCHING」です。 |
部品番号 | 2SJ210 |
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部品説明 | P-CHANNEL MOS FET FOR SWITCHING | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューと2SJ210ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ210
P-CHANNEL MOSFET
FOR SWITCHING
The 2SJ210, P-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
The 2SJ210 has excellent switching characteristics and is
suitable as a high-speed switching device in digital circuits.
FEATURES
• Directly driven by the output of ICs having a 5 V power source.
• Not necessary to consider driving current because of its high
input impedance.
• Possible to reduce the number of parts by omitting the bias
resistor.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
<R>
ORDERING INFORMATION
PART NUMBER
2SJ210
Marking: H16
PACKAGE
SC-59 (Mini Mold)
1. Source
2. Gate
3. Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note
Total Power Dissipation
VGSS
ID(DC)
ID(pulse)
PT
m20
m200
m400
200
Channel Temperature
Tch 150
Storage Temperature
Tstg −55 to +150
V
V
mA
mA
mW
°C
°C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
<R> Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17906EJ3V0DS00 (3rd edition)
(Previous No. TC-2293A)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1990
1 Page TYPICAL CHARACTERISTICS (TA = 25°C)
<R>
240
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
160
120
80
40
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature - ˚C
2SJ210
Data Sheet D17906EJ3V0DS
3
3Pages | |||
ページ | 合計 : 5 ページ | ||
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PDF ダウンロード | [ 2SJ210 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SJ210 | P-CHANNEL MOS FET FOR SWITCHING | NEC |
2SJ210 | MOS Fied Effect Transistor | Kexin |
2SJ210 | P-CHANNEL MOSFET FOR SWITCHING | Renesas |
2SJ210C | P-CHANNEL MOSFET FOR SWITCHING | Renesas |