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D1027UKのメーカーはSeme LABです、この部品の機能は「METAL GATE RF SILICON FET」です。 |
部品番号 | D1027UK |
| |
部品説明 | METAL GATE RF SILICON FET | ||
メーカ | Seme LAB | ||
ロゴ | |||
このページの下部にプレビューとD1027UKダウンロード(pdfファイル)リンクがあります。 Total 6 pages
TetraFET
D1027UK
MECHANICAL DATA
C
(2 pls)
HD
1
B
2
5
E
(4 pls)
F
I
3
4
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
DR
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres Tol.
A 19.05 0.50
B 10.77 0.13
C 45°
5°
D 9.78 0.13
E 5.71 0.13
F 27.94 0.13
G 1.52R 0.13
H 10.16 0.13
I 22.22 MAX
J 0.13 0.02
K 2.72 0.13
M 1.70 0.13
N 5.08 0.50
O 34.03 0.13
P 1.57R 0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 28V – 175MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
438W
BVDSS
Drain – Source Breakdown Voltage
70V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
30A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 2/00
1 Page D1027UK
400 100
350 90
300 80
250
Pout
200
W
150
70
Drain Efficiency
60
%
50
100
f = 175MHz
40
Idq = 2A
50
Vds = 28V
30
0 20
0 2 4 6 8 10 12 14 16 18 20
Pin W
Pout
Drain Efficiency
Figure 1 – Power Output and Efficiency
vs. Power Input.
-20
-30
IMD
-40
dBc
-50
-60
20
40 60 80 100 120 140 160
Pout W PEP
IMD3 at Idq=1.5A
IMD3 at Idq=2.5A
f1 = 175.0 MHz
f2 = 175.1 MHz
VDS = 28V
180
Figure 3 – IMD vs. Output Power.
400 20
350
300
250
Pout
200
W
150
f = 175MHz
Idq = 2A
Vds = 28V
18
Gain
16
dB
100 14
50
0 12
0 2 4 6 8 10 12 14 16 18 20
Pin W
2nd harmonic = -28dBc
Pout 3rd harmonic = -40dBc
Gain
output at 350W
Figure 2 – Power Output & Gain
vs. Power Input.
-20 18.5
-30
IMD
dBc
-40
17.5
Gain
dB
16.5
-50 15.5
0 0.5 1 1.5 2 2.5
IMD3
IMD5
Gain
Idq A
f1 = 175.0MHz
f2 = 175.1MHz
Pout = 130W PEP
Vds = 28V
Figure 4 – IMD & Gain vs. Idq
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 2/00
3Pages D1027UK
G a te - B ia s
10k
100n 1n 100k
T2
L1
D 1027U K
L2
100n
28V
1 12 1n
1000u
820K
T4
680pF
1u
T1
2 -1 8 p F
T6
9 0 p F 2 -1 8 p F
47pF
1u
T3
D 1027U K
680pF
T5
D1027UK 175MHz TEST FIXTURE
T1,2,3
T4,5
T6
L1
L2
7cm Storm Products EXE18 19/30 S1TW coaxial cable on Siemens
A1 x 1 2-hole core.
14cm Storm Products EXE18 19/30 S1TW coaxial cable.
11cm Storm Products EXE18 19/30 S1TW coaxial cable
6 turns 1.2mm dia wire, 5mm internal diameter
1.5 turns 0.9mm dia wire on Siemens A1 x 1 2 hole core
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 2/00
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ D1027UK データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
D1027UK | METAL GATE RF SILICON FET | Seme LAB |