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Datasheet MJ10023 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | MJ10023 | NPN SILICON POWER DARLINGTON TRANSISTOR MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10023/D
™ Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
Designer's
MJ10023
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS
The MJ10023 Darlington transis | ON Semiconductor | transistor |
2 | MJ10023 | Silicon NPN Power Darlington Transistor MJ10023
GENERAL DESCRIPTION
Silicon NPN Power Darlington Transistor
Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications.
TO-3
QUICK REFERENCE DATA
SYMBOL
VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf
PARAMETER Collector-emitter voltage p | Wing Shing Computer Components | transistor |
3 | MJ10023 | 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ10022/D
™ Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
Designer's
MJ10022 MJ10023
40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS
The MJ10022 | Motorola Inc | transistor |
4 | MJ10023 | POWER TRANSISTORS(40A/350-400V/250W) A
A
A
A
| Mospec Semiconductor | transistor |
5 | MJ10023 | Trans Darlington NPN 400V 40A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor | data |
MJ1 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | MJ1000 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi Motorola Inc transistor | | |
2 | MJ1000 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
www.datasheet4u.com
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli SavantIC transistor | | |
3 | MJ1000 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the Comset Semiconductors data | | |
4 | MJ1000 | Trans GP BJT NPN 60V 8A 3-Pin(2+Tab) TO-3 Sleeve New Jersey Semiconductor data | | |
5 | MJ10000 | POWER TRANSISTORS(20A/350-400V/175W) A
A
A
A
Mospec Semiconductor transistor | | |
6 | MJ10000 | 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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MJ10000
Designer's
SWITCHMODE Series NPN Silicon Power Darlington Transistor
The MJ10000 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. I Motorola Inc transistor | | |
7 | MJ10000 | NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS) MJ10000
NPN
SILICON TRANSISTOR
SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature
Wing Shing Computer Components transistor | |
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Número de pieza | Descripción | Fabricantes | |
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