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PDF MJ10012 Data sheet ( Hoja de datos )
| Número de pieza | MJ10012 | |
| Descripción | 10 AMPERE POWER TRANSISTORS DARLINGTON NPN SILICON 400 VOLTS 175 AND 118 WATTS | |
| Fabricantes | Motorola Inc | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJ10012 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 400 Vdc (Min)
• 175 Watts Capability at 50 Volts
• Automotive Functional Tests
COLLECTOR
BASE
≈ 1 k ≈ 30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEMITTER
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 27 Ω)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCER
MJ10012 MJH10012
400
550
Unit
Vdc
Vdc
VCBO
VEBO
IC
IB
PD
TJ, Tstg
600 Vdc
8.0 Vdc
10 Adc
15
2.0 Adc
175 118 Watts
100 47.5 Watts
1.0 1.05 W/_C
– 65 to + 200 – 55 to + 150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSoldering Purposes: 1/8″ from
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCase for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
1.0
275
0.95
275
Unit
_C/W
_C
Order this document
by MJ10012/D
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ10012
CASE 340D–01
TO–218 TYPE
MJH10012
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
PACKAGE DIMENSIONS
MJ10012 MJH10012
E
V
H
A
N
C
–T–
SEATING
PLANE
D 2 PL
K
0.13 (0.005) M T Q M Y M
U
L
–Y–
2
GB
1
–Q–
0.13 (0.005) M T Y M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
INCHES
DIM MIN MAX
A 1.550 REF
B ––– 1.050
C 0.250 0.335
D 0.038 0.043
E 0.055 0.070
G 0.430 BSC
H 0.215 BSC
K 0.440 0.480
L 0.665 BSC
N ––– 0.830
Q 0.151 0.165
U 1.187 BSC
V 0.131 0.188
MILLIMETERS
MIN MAX
39.37 REF
––– 26.67
6.35 8.51
0.97 1.09
1.40 1.77
10.92 BSC
5.46 BSC
11.18 12.19
16.89 BSC
––– 21.08
3.84 4.19
30.15 BSC
3.33 4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
C
B QE
U4
SL
K
1 23
A
V
G
DJ
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX
A 19.00 19.60
B 14.00 14.50
C 4.20 4.70
D 1.00 1.30
E 1.45 1.65
G 5.21 5.72
H 2.60 3.00
J 0.40 0.60
K 28.50 32.00
L 14.70 15.30
Q 4.00 4.25
S 17.50 18.10
U 3.40 3.80
V 1.50 2.00
INCHES
MIN MAX
0.749 0.771
0.551 0.570
0.165 0.185
0.040 0.051
0.058 0.064
0.206 0.225
0.103 0.118
0.016 0.023
1.123 1.259
0.579 0.602
0.158 0.167
0.689 0.712
0.134 0.149
0.060 0.078
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–01
SOT 93, TO–218 TYPE
ISSUE A
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MJ10012.PDF ] | |
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