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PDF MJ10009 Data sheet ( Hoja de datos )
| Número de pieza | MJ10009 | |
| Descripción | NPN SILICON POWER DARLINGTON TRANSISTORS | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MJ10009 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10009/D
™Designer's Data Sheet
SWITCHMODE Series
MJ10009*
*Motorola Preferred Device
NPN Silicon Power Darlington
Transistor with Base-Emitter
Speedup Diode
The MJ10009 Darlington transistor is designed for high–voltage, high–speed,
power switching in Inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
20 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
450 and 500 VOLTS
175 WATTS
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
1.6 µs (max) Inductive Crossover Time – 10 A, 100_C
3.5 µs (max) Inductive Storage Time – 10 A, 100_C
Operating Temperature Range –65 to + 200_C
100_C Performance Specified for:
≈ 100 ≈ 15
CASE 1–07
TO–204AA
(TO–3)
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSaturation Voltages
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎLeakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO
VCEX
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Value
500
500
700
8
20
30
2.5
5
175
100
1
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol Max Unit
RθJC
TL
1 _C/W
275 _C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
1 page  
MJ10009
TYPICAL CHARACTERISTICS
SWITCHING TIMES NOTE (continued)
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained us-
ing the standard equation from AN–222.
PSWT = 1/2 VCC IC (tc) f
Typical inductive switching waveforms are shown in Fig-
]ure 7. In general, trv + tfi tc. However, at lower test cur-
rents this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency con-
verter circuits, the user oriented specifications which make
this a “SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed at 100_C.
RESISTIVE SWITCHING PERFORMANCE
2
vtP = 25 µs, DUTY CYCLE 2%
1
VCC = 250 V
IC/IB = 20
0.5 TJ = 25°C
tr
1.0
VCC = 250 V
IC/IB = 20
0.5
VBE(off) = 5 V
TJ = 25°C
ts
v0.2 tP = 25 µs, DUTY CYCLE 2%
tf
0.2 0.1
0.1
1
td
2 5 10
IC, COLLECTOR CURRENT (AMP)
20
0.05
1
2 5 10
IC, COLLECTOR CURRENT (AMP)
20
Figure 8. Turn-On Time
Figure 9. Turn-Off Time
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
0.01
0.01 0.02
SINGLE PULSE
0.05 0.1
0.2
ZθJC (t) = r(t) RθJC
P(pk)
RθJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0
2.0 5.0
t, TIME (ms)
10
20
50 100 200
500
Figure 10. Thermal Response
1k
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MJ10009.PDF ] | |
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