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PDF AMC032DFLKA Data sheet ( Hoja de datos )
| Número de pieza | AMC032DFLKA | |
| Descripción | 4/ 8/ 20/ or 32 Megabyte 5.0 Volt-only Flash Memory PC Card | |
| Fabricantes | Advanced Micro Devices | |
| Logotipo |  |
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FINAL
AmC0XXDFLKA
4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card
DISTINCTIVE CHARACTERISTICS
s High performance
— 150 ns maximum access time
s Single supply operation
— Write and erase voltage, 5.0 V ±5%
— Read voltage, 5.0 V ±5%
s CMOS low power consumption
— 45 mA maximum active read current (x8 mode)
— 65 mA maximum active write/erase current
(x8 mode)
s High write endurance
— Minimum 100,000 program/erase cycles per
sector
— 1,000,000 typical program/erase cycles per card
s PCMCIA/JEIDA 68-pin standard
— Selectable byte-/or word-wide configuration
s Write protect switch
— Prevents accidental data loss
s Zero data retention power
— Batteries not required for data storage
GENERAL DESCRIPTION
AMD’s 5.0 Volt-only Flash Memory PC Card provides
the highest system level performance for data and file
storage solutions to the portable PC market segment
and a wide range of embedded applications. Manufac-
tured with AMD’s Negative Gate Erase, 5.0 Volt-only
technology, the AMD 5.0 Volt-only Flash Memory
Cards are the most cost-effective and reliable ap-
proach to single-supply Flash memory cards. Data files
and application programs can be stored on the D-Se-
ries cards. This allows OEM manufacturers of portable
systems to eliminate the weight, high-power consump-
tion and reliability issues associated with
electro-mechanical disk-based systems. The D-Series
cards also allow today’s bulky and heavy battery packs
to be reduced in weight and size. AMD’s Flash Memory
PC Cards provide the most efficient method to transfer
useful work between different hardware platforms. The
enabling technology of the D-Series cards enhances
the productivity of mobile workers.
Widespread acceptance of the D-Series cards
is assured due to their compatibility with the
s Enhanced power management for standby
mode
— 1 µA typical standby current
— Standard access time from standby mode
s Separate attribute memory
s Automated write and erase operations increase
system write performance
— 64K byte memory sectors for faster automated
erase speed
— Typically 1 s per single memory sector erase
— Random address writes to previously erased
bytes (8 µs typical per byte)
s Total system integration solution
— Support from independent software and
hardware vendors
s Low insertion and removal force
— State-of-the-art connector allows for minimum
card insertion and removal effort
s Erase Suspend/Resume
— Supports reading or programming data to a
sector not being erased within the same device
s Support for RY/BY and RESET signals
68-pin PCMCIA/JEIDA international standard. AMD’s
Flash Memory Cards can be read in either a byte-wide
or word-wide mode which allows for flexible integration
into various system platforms. Compatibility is assured
at the hardware interface and software interchange
specification. The Card Information Structure (CIS) or
Metaformat, can be written by the OEM into the mem-
ory card’s attribute memory address space beginning
at address 00000H by using a format utility. The CIS
appears at the beginning of the Card’s attribute mem-
ory space and defines the low-level organization of
data on the PC Card. The D-Series cards contains a
separate EEPROM memory for the cards’ attribute
memory space. This allows all of the Flash memory to
be used for the common memory space.
Third party software solutions such as Microsoft’s and
SystemSoft’s Flash File System (FFS2), SCM’s
SCM-FTL, and Datalight’s Cardtrick enable AMD’s
Flash Memory PC Card to replicate the function
of traditional disk-based memory systems.
Publication# 19521 Rev: D Amendment/0
Issue Date: December 1996
1 page  
Differences Between the D-Series and
C-Series Cards
The differences between the D-Series Card and the
earlier C-Series Cards are as follows:
s The D-Series Cards are based on AMD’s latest 16
MBit 5.0 Volt-only device, the Am29F016C. The ear-
lier C-Series Cards were based on the 4 MBit 5.0
Volt-only device, the Am29F040.
s The D-Series Cards program faster than the C-
Series Cards. This is due to faster byte write times
and an optimized address unlock sequence for
write operations.
s The D-Series Cards are offered in higher densi-
ties. The D-Series Cards are available in densities
of 4 MBytes, 8 MBytes, 20 MBytes, and 32
MBytes. The earlier C-Series Cards were avail-
able in densities of 1 MByte, 2 MBytes, 4 MBytes
and 10 MBytes.
The additional features that are supported in the new
D-Series Cards include
s The D-Series Cards support the RESET feature.
This allows you to asynchronously RESET the Card
into the read state.
s The D-Series Cards also provide the RY/BY func-
tionality. This feature provides a quick way of deter-
mining if the Card is busy doing a write or erase
operation, or if it is in a position to undertake the
next operation.
s Availability of an additional Toggle bit (D2) to deter-
mine if the Card is in the Embedded Erase or Erase
Suspend mode.
s Programming operations can be executed in 8 µs
pulses, down from the 16 µs on the C-Series
Cards (typical).
s Time out from the rising edge of the WE pulse for
sector erase command reduced from 100 µs to
50 µs.
s The D-Series Cards offers a low power standby
mode with fast recovery time to read. The typical
standby current (ICCS) is <1 µA with recovery at
standard read access time.
AmC0XXDFLKA
5
5 Page 
Table 4. Odd Byte Command Definitions (Notes 1–5)
Embedded
Command
Sequence
Bus
Write
Cycles
Req’d
First Bus
Write Cycle
Addr* Data
Second Bus
Write Cycle
Addr* Data
Third Bus
Fourth Bus
Write Cycle Read/Write Cycle
Addr* Data Addr* Data
Fifth Bus
Write Cycle
Addr* Data
Sixth Bus
Write Cycle
Addr* Data
Reset/Read
1 XXXXH F0
Reset/Read
4 XXXXH AA XXXXH 55 XXXXH F0 RA
RD
Autoselect
00H
4 XXXXH AA XXXXH 55 XXXXH 90
02H
01
3D
Byte Write
4 XXXXH AA XXXXH 55 XXXXH A0 PA
PD
Segment Erase 6 XXXXH AA XXXXH 55 XXXXH 80 XXXXH AA XXXXH 55 XXXXH 10
Sector Erase
6 XXXXH AA XXXXH 55 XXXXH 80 XXXXH AA XXXXH 55 SA 30
Sector Erase Suspend XXXXH AA Erase can be suspended during sector erase with Addr (don’t care), Data (B0H)
Sector Erase Resume XXXXH AA Erase can be resumed after suspend with Addr (don’t care), Data (30H)
* Address for Memory Segment 1 (S1) only. Address for the higher odd memory segments (S3–S15) = (Addr) + ((N–1)/2)*
400000H + 20000H where N = Memory Segment number (1) for 4 Mbyte, N = (1, 3) for 8 Mbyte, N = (1, 3, 5) for 12 Mbyte,
N = (1…9) for 20 Mbyte, N = (1...15) for 32 Mbyte.
Notes:
1. Address bits = X = Don’t Care for all address commands except for Program Address (PA), Read Address (RA) and Sector
Address (SA).
2. Bus operations are defined in Table 1.
3. RA = Address of the memory location to be read.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WEpulse.
SA = Address of the sector to be erased. The combination of A17, A18, A19, A20, A21 will uniquely select any sector of a
segment.
To select the memory segment: 4 Mbyte:
Use CE2
8 Mbyte:
Use CE2 and A22
20 and 32 Mbyte: Use CE2 and A22–A24.
4. RD = Data read from location RA during read operation.
PD = Data to be programmed at location PA. Data is latched on the rising edge of WE pulse.
5. A0 = 1 and CE1 = 0 or A0 = X and CE2 = 0.
AmC0XXDFLKA
11
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