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PDF AN8085M Data sheet ( Hoja de datos )
| Número de pieza | AN8085M | |
| Descripción | 3-pin/ positive output/ low dropout voltage regulator (50 mA type) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Voltage Regulators
AN80xx/AN80xxM Series
3-pin, positive output, low dropout voltage regulator (50 mA type)
I Overview
The AN80xx series and the AN80xxM series are 3-
pin, low dropout, fixed positive output type monolithic
voltage regulators. Since their power consumption can
be minimized, they are suitable for battery-used power
supply and reference voltage. 13 types of output voltage
are available; 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000 only),
4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V.
I Features
• Input/output voltage difference: 0.3V max.
• Output current of up to 50mA
• Low bias current: 0.6mA typ.
• Output voltage: 2V, 2.5V, 3V, 3.5V (SSIP003-P-0000
only), 4V, 4.5V, 5V, 6V, 7V, 8V, 8.5V, 9V, and 10V
• Built-in overcurrent protection circuit
AN80xx series
5.0±0.2
Unit: mm
4.0±0.2
0.6±0.15
2.3±0.2
2.54
0.43+–00..015
0.43+–00..015
231
SSIP003-P-0000
1: Input
2: Output
3: GND
AN80xxM series
4.6 max.
1.8 max.
Unit: mm
1.6 max.
I Block Diagram (AN80xxM series)
0.48 max.
0.58 max.
1.5 1.5
3.0
0.44 max.
3 21
HSIP003-P-0000B
1: Output
2: GND
3: Input
Note) The packages (SSIP003-P-0000 and HSIP003-
P-0000B) of this product will be changed to
lead-free type (SSIP003-P-0000S and
HSIP003-P-0000Q). See the new package di-
mensions section later of this datasheet.
Starter
Voltage
Reference
+
Error
Amp.
−
Current
Limiter
R2
R1
3 21
(1)
VI
(3) − + (2)
CIN COUT
VO
R1 = 5kΩ
CIN = 0.33µF
COUT = 10µF
Note) The number in ( ) shows the pin number for the AN80xx series.
Publication date: December 2001
SFF00007CEB
1
1 page  
AN80xx/AN80xxM Series
I Electrical Characteristics at Ta = 25°C (continued)
• AN8007, AN8007M (7V type)
Parameter
Symbol
Conditions
Min Typ Max Unit
Output voltage
VO Tj = 25°C
6.72 7 7.28 V
Line regulation
REGIN VI = 7.5 to 13V, Tj = 25°C
6.5 70 mV
Load regulation
REGL
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
14 50 mV
31 60 mV
Minimum input/output voltage difference
VDIF(min)
VI = 6.8V, IO = 20mA, Tj = 25°C
VI = 6.8V, IO = 50mA, Tj = 25°C
0.07 0.2
0.13 0.3
V
V
Bias current
IBias IO = 0mA, Tj = 25°C
0.7 1.3 mA
Ripple rejection ratio
RR VI = 8 to 10V, f = 120Hz
50 62
dB
Output noise voltage
Vno f = 10Hz to 100kHz
120 µV
Output voltage temperature coefficient
∆VO/Ta Tj = −30 to +125°C
0.35 mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 8V, IO = 20mA and CO = 10µF.
• AN8008, AN8008Myp(8V type)
Parameter
Symbol
Conditions
Min Typ Max Unit
Output voltage
VO Tj = 25°C
7.68 8 8.32 V
Line regulation
REGIN VI = 8.5 to 14V, Tj = 25°C
7.5 80 mV
Load regulation
REGL
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
15 55 mV
34 65 mV
Minimum input/output voltage difference
VDIF(min)
VI = 7.8V, IO = 20mA, Tj = 25°C
VI = 7.8V, IO = 50mA, Tj = 25°C
0.07 0.2
0.14 0.3
V
V
Bias current
IBias IO = 0mA, Tj = 25°C
0.7 1.3 mA
Ripple rejection ratio
RR VI = 9 to 11V, f = 120Hz
49 61
dB
Output noise voltage
Vno f = 10Hz to 100kHz
135 µV
Output voltage temperature coefficient
∆VO/Ta Tj = −30 to +125°C
0.4 mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9V, IO = 20mA and CO = 10µF.
• AN8085, AN8085M y(p8.5V type)
Parameter
Symbol
Conditions
Min Typ Max Unit
Output voltage
VO Tj = 25°C
8.16 8.50 8.84
V
Line regulation
REGIN VI = 9 to 14.5V, Tj = 25°C
8.3 90 mV
Load regulation
REGL
IO = 1 to 40mA, Tj = 25°C
IO = 1 to 50mA, Tj = 25°C
16 60 mV
36 70 mV
Minimum input/output voltage difference
VDIF(min)
VI = 8.3V, IO = 20mA, Tj = 25°C
VI = 8.3V, IO = 50mA, Tj = 25°C
0.07 0.2
0.14 0.3
V
V
Bias current
IBias IO = 0mA, Tj = 25°C
0.8 1.4 mA
Ripple rejection ratio
RR VI = 9.5 to 11.5V, f = 120Hz
48 60
dB
Output noise voltage
Vno f = 10Hz to 100kHz
140 µV
Output voltage temperature coefficient
∆VO/Ta Tj = −30 to +125°C
0.43 mV/°C
Note 1) The specified condition Tj = 25°C means that the test should be carried out within so short a test time (within 10ms) that the
characteristic value drift due to the chip junction temperature rise can be ignored.
Note 2) Unless otherwise specified, VI = 9.5V, IO = 20mA and CO = 10µF.
SFF00007CEB
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AN8085M.PDF ] | |
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