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BAT54 の電気的特性と機能

BAT54のメーカーはNXP Semiconductorsです、この部品の機能は「Schottky barrier double diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 BAT54
部品説明 Schottky barrier double diodes
メーカ NXP Semiconductors
ロゴ NXP Semiconductors ロゴ 




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BAT54 Datasheet, BAT54 PDF,ピン配置, 機能
BAT54 series
Schottky barrier diodes
Rev. 5 — 5 October 2012
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier diodes with an integrated guard ring for stress protection,
encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VR reverse voltage
VF forward voltage IF = 100 mA
IR
reverse current
VR = 25 V
[1] Pulse test: tp 300 s;   0.02.
2. Pinning information
Min Typ Max Unit
- - 30 V
[1] - - 800 mV
[1] - - 2 A
Table 2.
Pin
BAT54
1
2
3
Pinning
Description
anode
not connected
cathode
Simplified outline Graphic symbol
3
12
3
12
n.c.
006aaa436

1 Page





BAT54 pdf, ピン配列
NXP Semiconductors
BAT54 series
Schottky barrier diodes
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
VR reverse voltage
IF forward current
IFRM
repetitive peak forward
current
IFSM non-repetitive peak
forward current
Per device; one diode loaded
Tamb = 25 C
tp 1 s;   0.5;
Tamb = 25 C
square wave;
tp < 10 ms
-
-
-
[1] -
Ptot
Tj
Tamb
Tstg
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb 25 C
[2] -
-
55
65
Max Unit
30 V
200 mA
300 mA
600 mA
250
150
+150
+150
mW
C
C
C
[1] Tj = 25 C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter
Per device; one diode loaded
Rth(j-a)
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][2] - - 500 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAT54_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 5 October 2012
© NXP B.V. 2012. All rights reserved.
3 of 11


3Pages


BAT54 電子部品, 半導体
NXP Semiconductors
9. Package outline
BAT54 series
Schottky barrier diodes
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
Dimensions in mm
1.9
Fig 5. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
10. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
BAT54 series SOT23 4 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-215
-235
[1] For further information and the availability of packing methods, see Section 14.
BAT54_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 5 October 2012
© NXP B.V. 2012. All rights reserved.
6 of 11

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共有リンク

Link :


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