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HM628128DI の電気的特性と機能

HM628128DIのメーカーはHitachi Semiconductorです、この部品の機能は「1 M SRAM (128-kword X 8-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM628128DI
部品説明 1 M SRAM (128-kword X 8-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HM628128DI Datasheet, HM628128DI PDF,ピン配置, 機能
HM628128DI Series
1 M SRAM (128-kword × 8-bit)
ADE-203-999A (Z)
Preliminary
Rev. 0.1
Jul. 8, 1999
Description
The Hitachi HM628128DI Series is 1-Mbit static RAM organized 131,072-kword × 8-bit. HM628128DI
Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
process technology. The HM628128DI Series offers low power standby power dissipation; therefore, it is
suitable for battery backup systems. It has package variations of standard 32-pin plastic DIP, standard 32-pin
plastic SOP.
Features
Single 5 V supply: 5 V ± 10%
Access time: 70 ns (max)
Power dissipation
Active: 30 mW/MHz (typ)
Standby: 10 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output
Three state output
Directly TTL compatible all inputs
Battery backup operation
2 chip selection for battery backup
Temperature range: –40 to +85°C
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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HM628128DI pdf, ピン配列
Pin Arrangement
32-pin DIP/SOP
NC 1
A16 2
A14 3
A12 4
A7 5
A6 6
A5 7
A4 8
A3 9
A2 10
A1 11
A0 12
I/O0 13
I/O1 14
I/O2 15
VSS 16
32 VCC
31 A15
30 CS2
29 WE
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CS1
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
(Top view)
Pin Description
Pin name
A0 to A16
I/O0 to I/O7
CS1
CS2
WE
OE
VCC
VSS
NC
Function
Address input
Data input/output
Chip select 1
Chip select 2
Write enable
Output enable
Power supply
Ground
No connection
HM628128DI Series
3


3Pages


HM628128DI 電子部品, 半導体
HM628128DI Series
DC Characteristics
Parameter
Symbol Min Typ*1 Max Unit Test conditions
Input leakage current
|ILI| — — 1 µA Vin = VSS to VCC
Output leakage current
|ILO| — — 1 µA CS1 = VIH or CS2 = VIL or
OE = VIH or WE = VIL,
VI/O = VSS to VCC
Operating current
ICC — — 15 mA CS1 = VIL, CS2 = VIH,
others = VIH/VIL, II/O = 0 mA
Average operating current
ICC1 — — 60 mA Min cycle, duty = 100%
II/O = 0 mA, CS1 = VIL, CS2
= VIH, Others = VIH/VIL
ICC2 — 6 20 mA Cycle time = 1 µs,
duty = 100%,
II/O = 0 mA, CS1 0.2 V,
CS2 VCC – 0.2 V,
VIH VCC – 0.2 V,
VIL 0.2 V
Standby current
I SB
——2
mA (1) CS1 = VIH, CS2 = VIH, or
(2) CS2 = VIL
I
*2
SB1
2
100 µA 0 V Vin
(1) 0 V CS2 0.2 V or
(2) CS1 VCC – 0.2 V,
CS2 VCC – 0.2 V
Output high voltage
VOH 2.4 — — V IOH = –1 mA
Output low voltage
VOL — — 0.4 V IOL = 2.1 mA
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and specified loading, and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Symbol Typ Max Unit Test conditions Note
Input capacitance
Cin — 8
pF Vin = 0 V
1
Input/output capacitance CI/O — 10
Note: 1. This parameter is sampled and not 100% tested.
pF
VI/O = 0 V
1
6

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ページ 合計 : 16 ページ
 
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共有リンク

Link :


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