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HM624100HCLJP-10 の電気的特性と機能

HM624100HCLJP-10のメーカーはHitachi Semiconductorです、この部品の機能は「4M High Speed SRAM (1-Mword x 4-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM624100HCLJP-10
部品説明 4M High Speed SRAM (1-Mword x 4-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HM624100HCLJP-10 Datasheet, HM624100HCLJP-10 PDF,ピン配置, 機能
HM624100HC Series
4M High Speed SRAM (1-Mword × 4-bit)
ADE-203-1198 (Z)
Preliminary
Rev. 0.0
Nov. 30, 2000
Description
The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed
access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing
technology. It is most appropriate for the application which requires high speed and high density memory,
such as cache and buffer memory in system. The HM624100HC is packaged in 400-mil 32-pin SOJ for high
density surface mounting.
Features
Single 5.0 V supply : 5.0 V ± 10 %
Access time 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current : 140 mA (max)
TTL standby current : 40 mA (max)
CMOS standby ccurrent : 5 mA (max)
: 1.2 mA (max) (L-version)
Data retension current : 0.8 mA (max) (L-version)
Data retension voltage : 2.0 V (min) (L-version)
Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your nearest
Hitachi’s Sales Dept. regarding specification.

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HM624100HCLJP-10 pdf, ピン配列
Pin Arrangement
HM624100HC Series
32-pin SOJ
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O1 7
VCC
VSS
I/O2
8
9
10
WE 11
A5 12
A6 13
A7 14
A8 15
A9 16
32 A19
31 A18
30 A17
29 A16
28 A15
27 OE
26 I/O4
25 VSS
24 VCC
23 I/O3
22 A14
21 A13
20 A12
19 A11
18 A10
17 NC
(Top view)
Pin Description
Pin name
A0 to A19
I/O1 to I/O4
CS
OE
WE
VCC
VSS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
No connection
3


3Pages


HM624100HCLJP-10 電子部品, 半導体
HM624100HC Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Operation power supply current
Symbol Min
IILII —
IILOI —
ICC
Typ*1
Max
2
2
140
Unit
µA
µA
mA
Standby power supply current
I SB
ISB1
TBD
40
5
mA
mA
—*2 TBD*2 1.2*2
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Test conditions
Vin = VSS to VCC
Vin = VSS to VCC
Min cycle
CS = VIL, lout = 0 mA
Other inputs = VIH/VIL
Min cycle, CS = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC CS V CC - 0.2 V,
(1) 0 V Vin 0.2 V or
(2) VCC Vin V CC - 0.2 V
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Typ
Input capacitance*1
Cin —
Input/output capacitance*1
CI/O
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
Unit
pF
pF
Test conditions
Vin = 0 V
VI/O = 0 V
6

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部品番号部品説明メーカ
HM624100HCLJP-10

4M High Speed SRAM (1-Mword x 4-bit)

Hitachi Semiconductor
Hitachi Semiconductor


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