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HM62256BLTM-8 の電気的特性と機能

HM62256BLTM-8のメーカーはHitachi Semiconductorです、この部品の機能は「256k SRAM (32-kword x 8-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM62256BLTM-8
部品説明 256k SRAM (32-kword x 8-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HM62256BLTM-8 Datasheet, HM62256BLTM-8 PDF,ピン配置, 機能
HM62256B Series
256k SRAM (32-kword × 8-bit)
ADE-203-135F (Z)
Rev. 6.0
Nov. 13, 1997
Description
The Hitachi HM62256B Series is a CMOS static RAM organized 32,768-word × 8-bit. It realizes higher
performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The
device, packaged in 8 × 14 mm TSOP, 8 × 13.4 mm TSOP with thickness of 1.2 mm, 450 mil SOP (foot
print pitch width), 600 mil plastic DIP, or 300 mil plastic DIP, is available for high density mounting. It
offers low power standby power dissipation; therefore, it is suitable for battery backup systems.
Features
Single 5.0 V supply: 5.0 V ± 10%
Access time: 55 ns/70 ns/85 ns (max)
Power dissipation:
Active: 25 mW (typ) (f = 1 MHz)
Standby: 1.0 µW (typ)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Common data input and output
Three state output
Directly TTL compatible all inputs and outputs
Battery backup operation

1 Page





HM62256BLTM-8 pdf, ピン配列
Pin Arrangement (cont.)
HM62256B Series
OE 1
A11 2
NC 3
A9 4
A8 5
A13 6
WE 7
VCC
8
A14 9
A12 10
A7 11
A6 12
A5 13
NC 14
A4 15
A3 16
OE 22
A11 23
A9 24
A8 25
A13 26
WE 27
VCC 28
A14 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
HM62256BLT Series
(Top view)
HM62256BLTM Series
(Top view)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CS
NC
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
NC
A1
A2
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
Pin Description
Pin Name
A0 to A14
I/O0 to I/O7
CS
WE
OE
VCC
VSS
NC
Function
Address input
Data input/output
Chip select
Write enable
Output enable
Power supply
Ground
No connection
3


3Pages


HM62256BLTM-8 電子部品, 半導体
HM62256B Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current |ILI| — — 1
µA Vin = VSS to VCC
Output leakage current |ILO| — — 1
µA CS = VIH or OE = VIH or WE = VIL,
VI/O = VSS to VCC
Operating current
ICC — 6
15 mA CS = VIL, Others = VIH/VIL,
II/O = 0 mA
Average HM62256B-5 ICC1
60 mA Min cycle, duty = 100%,II/O = 0 mA,
operating
CS = VIL, Others = VIH/VIL
current
HM62256B-7 ICC1
33
60
mA
HM62256B-8 ICC1
29
50
mA
I CC2
5
15 mA Cycle time = 1 µs, II/O = 0 mA,
CS = VIL, VIH = VCC, VIL = 0
Standby current
ISB — 0.3 2
mA CS = VIH
ISB1
0.2 100 µA Vin 0 V, CS VCC – 0.2 V
ISB1
0.2*2
50*2
µA
ISB1
0.2*3
10*3
µA
Output low voltage
VOL — — 0.4 V IOL = 2.1 mA
Output high voltage
VOH 2.4 — — V IOH = –1.0 mA
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristic is guaranteed only for L-SL version.
3. This characteristic is guaranteed only for L-UL version.
Capacitance (Ta = 25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O — —
Note: 1. This parameter is sampled and not 100% tested.
Max
8
10
Unit
pF
pF
Test Conditions
Vin = 0 V
VI/O = 0 V
6

6 Page



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共有リンク

Link :


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HM62256BLTM-7UL

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HM62256BLTM-8

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