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PDF HM62256ALR-10SL Data sheet ( Hoja de datos )
| Número de pieza | HM62256ALR-10SL | |
| Descripción | 32/768-word x 8-bit High Speed CMOS Static RAM | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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HM62256A Series
32,768-word × 8-bit High Speed CMOS Static RAM
Maintenance only
The Hitachi HM62256A is a CMOS static RAM
organized 32-kword × 8-bit. It realizes higher
performance and low power consumption by
employing 0.8 µm Hi-CMOS process technology.
The device, packaged in a 8 × 14 mm TSOP with
thickness of 1.2 mm, 450-mil SOP (foot print pitch
width), 600-mil plastic DIP, or 300-mil plastic DIP,
is available for high density mounting. TSOP
package is suitable for cards, and reverse type
TSOP is also provided. It offers low power
standby power dissipation; therefore, it is suitable
for battery back up system.
Features
• High speed: Fast Access time 85/100/120/150 ns
(max)
• Low Power
Standby: 5 µW (typ) (L/L-SL version)
Operation: 40 mW (typ) (f = 1 MHz)
• Single 5 V supply
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output: Three state
output
• Directly TTL compatible: All inputs and outputs
• Capability of battery back up operation
Ordering Information
Type No.
Access time Package
——————————————————————–
HM62256AP-8
85 ns
600-mil
HM62256AP-10
100 ns
28-pin
HM62256AP-12
120 ns
plastic DIP
HM62256AP-15
150 ns
(DP-28)
————————————————–
HM62256ALP-8
85 ns
HM62256ALP-10
100 ns
HM62256ALP-12
120 ns
HM62256ALP-15
150 ns
————————————————–
HM62256ALP-8SL 85 ns
HM62256ALP-10SL 100 ns
HM62256ALP-12SL 120 ns
HM62256ALP-15SL 150 ns
——————————————————————–
HM62256ASP-8
85 ns
300-mil
HM62256ASP-10
100 ns
28-pin
HM62256ASP-12
120 ns
plastic DIP
HM62256ASP-15
150 ns
(DP-28NA)
————————————————–
HM62256ALSP-8
85 ns
HM62256ALSP-10 100 ns
HM62256ALSP-12 120 ns
HM62256ALSP-15 150 ns
————————————————–
HM62256ALSP-8SL 85 ns
HM62256ALSP-10SL 100 ns
HM62256ALSP-12SL 120 ns
HM62256ALSP-15SL 150 ns
——————————————————————–
HM62256AFP-8T
85 ns
450-mil
HM62256AFP-10T 100 ns
28-pin
HM62256AFP-12T 120 ns
plastic SOP
HM62256AFP-15T 150 ns
(FP-28DA)
————————————————–
HM62256ALFP-8T 85 ns
HM62256ALFP-10T 100 ns
HM62256ALFP-12T 120 ns
HM62256ALFP-15T 150 ns
————————————————–
HM62256ALFP-8SLT 85 ns
HM62256ALFP-10SLT 100 ns
HM62256ALFP-12SLT 120 ns
HM62256ALFP-15SLT 150 ns
——————————————————————–
Note: This device is not available for new application.
1
1 page  
HM62256A Series
HM62256A Series
DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)
Parameter
Symbol Min Typ*1 Max Unit Test conditions
———————————————————————————————————————————————–
Input leakage current |ILI| — — 1 µA Vin = VSS to VCC
———————————————————————————————————————————————–
Output leakage current
|ILO|
—
—
1
µA CS = VIH or OE = VIH or WE = VIL,
VI/O = VSS to VCC
———————————————————————————————————————————————–
Operating VCC current
ICC
—6
15 mA CS = VIL, others = VIH/VIL
Iout = 0 mA
——————————————————————————————————————————
HM62256A-8 ICC1 — 33 50 mA min cycle, duty = 100%, II/O = 0 mA
HM62256A-10
— 30 50
CS = VIL, others = VIH/VIL
HM62256A-12
— 27 45
HM62256A-15
— 24 40
——————————————————————————————————————————
ICC2 — 5
15 mA Cycle time = 1µs, II/O = 0 mA
CS = VIL, VIH = VCC, VIL = 0
———————————————————————————————————————————————–
Standby VCC current ISB — 0.3 2 mA CS = VIH
———————————————————————————————————
ISB1
— 0.01 1
mA Vin ≥ 0 V
—————————————— CS ≥ VCC – 0.2 V
— 0.3*2 100*2 µA
——————————————
— 0.3*3 50*3 µA
———————————————————————————————————————————————–
Output low voltage
VOL — — 0.4 V IOL = 2.1 mA
———————————————————————————————————————————————–
Output high voltage
VOH 2.4 — — V IOH = –1.0 mA
———————————————————————————————————————————————–
Notes: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
3. This characteristics is guaranteed only for L-SL version.
Capacitance (Ta = 25°C, f = 1 MHz)*1
Parameter
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————————–
Input capacitance
Cin
——6
pF Vin = 0 V
———————————————————————————————————————————————–
Input/output capacitance
CI/O
——8
pF VI/O= 0 V
———————————————————————————————————————————————–
Note: 1. This parameter is sampled and not 100% tested.
5
5 Page 
HM62256A Series
Low VCC Data Retention Characteristics (Ta = 0 to +70°C)
This characteristics is guaranteed only for L/L-SL version.
HM62256A Series
Parameter
Symbol Min Typ*1 Max Unit Test conditions
———————————————————————————————————————————————–
VCC for data retention
VDR
2
— — V CS ≥ VCC – 0.2 V, Vin ≥ 0 V
———————————————————————————————————————————————–
Data retention current
ICCDR —
0.2 30*2 µA VCC = 3.0 V, Vin ≥ 0 V
——————————————–
— 0.2 10*3 µA CS ≥ VCC – 0.2 V
———————————————————————————————————————————————–
Chip deselect to data retention time tCDR 0
— — ns See retention waveform
——————————————————————————————————––
Operation recovery time
tR tRC*4 — — ns
———————————————————————————————————————————————–
Low VCC Data Retention Timing Waveform
VCC
4.5 V
2.2 V
VDR
CS
0V
t CDR
Data retention mode
CS ≥ VCC – 0.2 V
tR
Notes: 1 Typical values are at VCC = 3.0 V, Ta = +25°C and not guaranteed.
2. 20 µA max at Ta = 0 to +40°C. (only for L-version)
3. 3 µA max at Ta = 0 to +40°C. (only for L-SL version)
4. tRC = read cycle time.
5. CS controls address buffer, WE buffer, OE buffer, and Din buffer. If CS controls data
retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state.
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet HM62256ALR-10SL.PDF ] | |
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