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HM6216255HI の電気的特性と機能

HM6216255HIのメーカーはHitachi Semiconductorです、この部品の機能は「4M high Speed SRAM (256-kword x 16-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM6216255HI
部品説明 4M high Speed SRAM (256-kword x 16-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HM6216255HI Datasheet, HM6216255HI PDF,ピン配置, 機能
HM6216255HI Series
4M high Speed SRAM (256-kword × 16-bit)
ADE-203-1037A (Z)
Rev. 1.0
Apr. 15, 1999
Description
The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V ± 10 %
Access time: 12/15 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 200/180 mA (max)
TTL standby current: 60/50 mA (max)
CMOS standby current: 5 mA (max)
Center VCC and VSS type pinout
Temperature range: –40 to 85°C

1 Page





HM6216255HI pdf, ピン配列
Pin Description
Pin name
A0 to A17
I/O1 to I/O16
CS
OE
WE
Function
Address input
Data input/output
Chip select
Output enable
Write enable
HM6216255HI Series
Pin name
UB
LB
VCC
VSS
NC
Function
Upper byte select
Lower byte select
Power supply
Ground
No connection
Block Diagram
(LSB) A1
A17
A7
A11
A16
A2
A6
(MSB)A5
I/O...1
I/O8
I/O...9
I/O16
WE
CS
LB
UB
OE
Row
decoder
Memory matrix
256 rows × 8 columns ×
128 blocks × 16 bit
(4,194,304 bits)
Internal
voltage
generater
VCC
VSS
CS
Input
data
control
Column I/O
Column decoder
CS
A10 A8 A9 A12 A13 A14 A0 A15 A3 A4
CS
3


3Pages


HM6216255HI 電子部品, 半導体
HM6216255HI Series
AC Characteristics (Ta = –40 to +85°C, VCC = 5.0 V ± 10 %, unless otherwise noted.)
Test Conditions
Input pulse levels: 3.0 V/0.0 V
Input rise and fall time: 3 ns
Input and output timing reference levels: 1.5 V
Output load: See figures (Including scope and jig)
Dout Zo=50
1.5 V
RL=50
Dout
255
5V
480
5 pF
Output load (A)
Output load (B)
(for tCLZ, tOLZ, tLBLZ, tUBLZ, tCHZ, tOHZ,
tLBHZ, tUBHZ, tWHZ, and tOW)
Read Cycle
Parameter
Read cycle time
Address access time
Chip select access time
Output enable to output valid
Byte select to output valid
Output hold from address change
Chip select to output in low-Z
Output enable to output in low-Z
Byte select to output in low-Z
Chip deselect to output in high-Z
Output disable to output in high-Z
Byte deselect to output in high-Z
Symbol
t RC
t AA
t ACS
t OE
tLB, tUB
t OH
t CLZ
t OLZ
t ,LBLZ tUBLZ
t CHZ
t OHZ
t ,LBHZ tUBHZ
HM6216255HI
-12
Min Max
12 —
— 12
— 12
—6
—6
3—
3—
0—
0—
—6
—6
—6
-15
Min
15
3
3
0
0
Max Unit Notes
— ns
15 ns
15 ns
7 ns
7 ns
— ns
— ns 1
— ns 1
— ns 1
7 ns 1
7 ns 1
7 ns 1
6

6 Page



ページ 合計 : 16 ページ
 
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データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
HM6216255H

4M high Speed SRAM (256-kword x 16-bit)

Hitachi Semiconductor
Hitachi Semiconductor
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Hitachi Semiconductor
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HM6216255HCJP-10

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HM6216255HCLJP-10

4M High Speed SRAM (256-kword x 16-bit)

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Hitachi Semiconductor


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