|
|
Número de pieza | HM6216255HCLTT-10 | |
Descripción | 4M High Speed SRAM (256-kword x 16-bit) | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HM6216255HCLTT-10 (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! HM6216255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-
mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 170 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.
1 page HM6216255HC Series
Operation Table
CS OE WE LB
H×××
L HH×
L L HL
L L HL
L L HH
L L HH
L× L L
L ×LL
L ×LH
L ×LH
Note: ×: H or L
UB Mode
VCC current
× Standby
ISB, ISB1
× Output disable ICC
L Read
I CC
H Lower byte read ICC
L Upper byte read ICC
H—
I CC
L Write
I CC
H Lower byte write ICC
L Upper byte write ICC
H—
I CC
I/O1–I/O8
High-Z
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
I/O9–I/O16
High-Z
High-Z
Output
High-Z
Output
High-Z
Input
High-Z
Input
High-Z
Ref. cycle
—
—
Read cycle
Read cycle
Read cycle
—
Write cycle
Write cycle
Write cycle
—
Absolute Maximum Ratings
Parameter
Symbol
Value
Supply voltage relative to VSS
Voltage on any pin relative to VSS
Power dissipation
Operating temperature
VCC
VT
PT
Topr
–0.5 to +7.0
–0.5*1 to VCC + 0.5*2
1.0
0 to +70
Storage temperature
Tstg –55 to +125
Storage temperature under bias
Tbias
–10 to +85
Notes: 1. VT (min) = –2.0 V for pulse width (under shoot) ≤ 6 ns.
2. VT (max) = VCC + 2.0 V for pulse width (over shoot) ≤ 6 ns.
Unit
V
V
W
°C
°C
°C
5
5 Page Write Timing Waveform (1) (LB, UB Controlled)
Address
WE*3
CS*3
tWC
Valid address
tAW
tAS
tWP
tCW
HM6216255HC Series
tWR
OE
LB
UB
Dout
(Lower byte)
Dout
(Upper byte)
Din
(Lower byte)
Din
(Upper byte)
tLBW
tWHZ
tOHZ
tUBW
tOLZ
tOW
High impedance
High impedance
tDW tDH
Valid data
tDW tDH
Valid data
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet HM6216255HCLTT-10.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM6216255HCLTT-10 | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |