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HM6216255HCJP-10 の電気的特性と機能

HM6216255HCJP-10のメーカーはHitachi Semiconductorです、この部品の機能は「4M High Speed SRAM (256-kword x 16-bit)」です。


製品の詳細 ( Datasheet PDF )

部品番号 HM6216255HCJP-10
部品説明 4M High Speed SRAM (256-kword x 16-bit)
メーカ Hitachi Semiconductor
ロゴ Hitachi Semiconductor ロゴ 




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HM6216255HCJP-10 Datasheet, HM6216255HCJP-10 PDF,ピン配置, 機能
HM6216255HC Series
4M High Speed SRAM (256-kword × 16-bit)
ADE-203-1196 (Z)
Preliminary
Rev. 0.0
Oct. 31, 2000
Description
The HM6216255HC Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-
mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V ± 10 %
Access time: 10 ns (max)
Completely static memory
No clock or timing strobe required
Equal access and cycle times
Directly TTL compatible
All inputs and outputs
Operating current: 170 mA (max)
TTL standby current: 40 mA (max)
CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center VCC and VSS type pinout
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Hitachi’s Sales Dept. regarding specification.

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HM6216255HCJP-10 pdf, ピン配列
Pin Arrangement
44-pin SOJ
A0 1
A1 2
A2 3
A3 4
A4 5
CS 6
I/O1 7
I/O2 8
I/O3 9
I/O4 10
VCC
VSS
I/O5
11
12
13
I/O6 14
I/O7 15
I/O8 16
WE 17
A5 18
A6 19
A7 20
A8 21
A9 22
44 A17
43 A16
42 A15
41 OE
40 UB
39 LB
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 VSS
33 VCC
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NC
27 A14
26 A13
25 A12
24 A11
23 A10
(Top View)
Pin Description
Pin name
A0 to A17
I/O1 to I/O16
CS
OE
WE
Function
Address input
Data input/output
Chip select
Output enable
Write enable
HM6216255HC Series
44-pin TSOP
A0
A1
A2
A3
A4
CS
I/O1
I/O2
I/O3
I/O4
VCC
VSS
I/O5
I/O6
I/O7
I/O8
WE
A5
A6
A7
A8
A9
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 34
12 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
(Top View)
A17
A16
A15
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
VSS
VCC
I/O12
I/O11
I/O10
I/O9
NC
A14
A13
A12
A11
A10
Pin name
UB
LB
VCC
VSS
NC
Function
Upper byte select
Lower byte select
Power supply
Ground
No connection
3


3Pages


HM6216255HCJP-10 電子部品, 半導体
HM6216255HC Series
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Min Typ
Supply voltage
VCC*3
VSS * 4
4.5 5.0
00
Input voltage
VIH 2.2 —
VIL
–0.5*1
Notes: 1. VIL (min) = –2.0 V for pulse width (under shoot) 6 ns.
2. VIH (max) = VCC + 2.0 V for pulse width (over shoot) 6 ns.
3. The supply voltage with all VCC pins must be on the same level.
4. The supply voltage with all VSS pins must be on the same level.
Max
5.5
0
VCC + 0.5*2
0.8
Unit
V
V
V
V
DC Characteristics (Ta = 0 to +70°C, VCC = 5.0 V ± 10 %, VSS = 0 V)
Parameter
Symbol Min
Typ*1 Max Unit Test conditions
Input leakage current
|ILI| — — 2
µA Vin = VSS to VCC
Output leakage current*1
|ILO| — — 2
µA Vin = VSS to VCC
Operating power supply current ICC — — 170 mA CS = VIL, Iout = 0 mA
Other inputs = VIH/VIL
Standby power supply current
I SB
40 mA CS = VIH,
Other inputs = VIH/VIL
ISB1
TBD 5
mA VCC CS VCC – 0.2 V,
(1) 0 V Vin 0.2 V or
(2) VCC Vin VCC – 0.2 V
—*2 TBD*2 1.2*2
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Note: 1. Typical values are at VCC = 5.0 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O
——
Note: 1. This parameter is sampled and not 100% tested.
Max Unit
6 pF
8 pF
Test conditions
Vin = 0 V
VI/O = 0 V
6

6 Page



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部品番号部品説明メーカ
HM6216255HCJP-10

4M High Speed SRAM (256-kword x 16-bit)

Hitachi Semiconductor
Hitachi Semiconductor


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