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HM6216255HのメーカーはHitachi Semiconductorです、この部品の機能は「4M high Speed SRAM (256-kword x 16-bit)」です。 |
部品番号 | HM6216255H |
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部品説明 | 4M high Speed SRAM (256-kword x 16-bit) | ||
メーカ | Hitachi Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとHM6216255Hダウンロード(pdfファイル)リンクがあります。 Total 17 pages
HM6216255H Series
4M high Speed SRAM (256-kword × 16-bit)
ADE-203-763D (Z)
Rev. 1.0
Sep. 15, 1998
Description
The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
• Single 5.0 Vsupply : 5.0 V ± 10 %
• Access time: 10/12/15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 200/180/160 mA (max)
• TTL standby current: 70/60/50 mA (max)
• CMOS standby current: 5 mA (max)
: 1.2 mA (max) (L-version)
• Data retansion current: 0.8 mA (max) (L-version)
• Data retantion voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
1 Page Pin Description
Pin name
A0 to A17
I/O1 to I/O16
CS
OE
WE
Function
Address input
Data input/output
Chip select
Output enable
Write enable
HM6216255H Series
Pin name
UB
LB
VCC
VSS
NC
Function
Upper byte select
Lower byte select
Power supply
Ground
No connection
Block Diagram
(LSB) A1
A17
A7
A11
A16
A2
A6
(MSB)A5
I/O...1
I/O8
I/O...9
I/O16
WE
CS
LB
UB
OE
Row
decoder
Memory matrix
256 rows × 8 columns ×
128 blocks × 16 bit
(4,194,304 bits)
Internal
voltage
generater
VCC
VSS
CS
Input
data
control
Column I/O
Column decoder
CS
A10 A8 A9 A12 A13 A14 A0 A15 A3 A4
CS
3
3Pages HM6216255H Series
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min Typ
Input capacitance*1
Cin — —
Input/output capacitance*1
CI/O
——
Note: 1. This parameter is sampled and not 100% tested.
Max Unit
6 pF
8 pF
Test conditions
Vin = 0 V
VI/O = 0 V
6
6 Page | |||
ページ | 合計 : 17 ページ | ||
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PDF ダウンロード | [ HM6216255H データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
HM6216255H | 4M high Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
HM6216255HC | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
HM6216255HCJP-10 | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |
HM6216255HCLJP-10 | 4M High Speed SRAM (256-kword x 16-bit) | Hitachi Semiconductor |